Modeling phosphorus diffusion gettering of iron in single crystal silicon
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Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/jap
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School of Electrical Engineering |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2009
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Language
en
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4
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Journal of Applied Physics, Volume 105, Issue 2
Abstract
We propose a quantitative model for phosphorus diffusion gettering (PDG) of iron in silicon, which is based on a special fitting procedure to experimental data. We discuss the possibilities of the underlying physics of the segregation coefficient. Finally, we show that the proposed PDG model allows quantitative analysis of gettering efficiency of iron at various processing conditions.Description
Keywords
phosphorus diffusion gettering, iron, silicon, gettering efficiency, PDG, solar cells, segregation coefficient
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Citation
Haarahiltunen, Antti & Savin, Hele & Yli-Koski, Marko & Talvitie, Heli & Sinkkonen, Juha. 2009. Modeling phosphorus diffusion gettering of iron in single crystal silicon. Journal of Applied Physics. Volume 105, Issue 2. 0021-8979 (printed). DOI: 10.1063/1.3068337