Modeling phosphorus diffusion gettering of iron in single crystal silicon

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Journal ISSN
Volume Title
School of Electrical Engineering | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2009
Major/Subject
Mcode
Degree programme
Language
en
Pages
4
Series
Journal of Applied Physics, Volume 105, Issue 2
Abstract
We propose a quantitative model for phosphorus diffusion gettering (PDG) of iron in silicon, which is based on a special fitting procedure to experimental data. We discuss the possibilities of the underlying physics of the segregation coefficient. Finally, we show that the proposed PDG model allows quantitative analysis of gettering efficiency of iron at various processing conditions.
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Keywords
phosphorus diffusion gettering, iron, silicon, gettering efficiency, PDG, solar cells, segregation coefficient
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Citation
Haarahiltunen, Antti & Savin, Hele & Yli-Koski, Marko & Talvitie, Heli & Sinkkonen, Juha. 2009. Modeling phosphorus diffusion gettering of iron in single crystal silicon. Journal of Applied Physics. Volume 105, Issue 2. 0021-8979 (printed). DOI: 10.1063/1.3068337