Mid-long wavelength infrared absorptance of hyperdoped silicon via femtosecond laser microstructuring

Thumbnail Image

Access rights

openAccess
publishedVersion

URL

Journal Title

Journal ISSN

Volume Title

A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
This publication is imported from Aalto University research portal.
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)

Authors

Date

2022-01-17

Department

Department of Electronics and Nanoengineering

Major/Subject

Mcode

Degree programme

Language

en

Pages

10

Series

Optics Express, Volume 30, issue 2, pp. 1808-1817

Abstract

Hyperdoped silicon (hSi) fabricated via femtosecond laser irradiation has emerged as a promising photoelectric material with strong broadband infrared (IR) absorption. In this work, we measured the optical absorptance of the hSi in the wavelength of 0.3–16.7 µm. Unlike the near to mid wavelength IR absorption, the mid-long wavelength IR (M–LWIR) absorption is heavily dependent on the surface morphology and the dopants. Furthermore, calculations based on coherent potential approximation (CPA) reveal the origin of free carrier absorption, which plays an important role in the M–LWIR absorption. As a result, a more comprehensive picture of the IR absorption mechanism is drawn for the optoelectronic applications of the hSi.

Description

Keywords

Femtosecond lasers, Laser beams, Laser irradiation, Optical absorption, Scanning electron microscopy, Solar cells

Other note

DOI

10.1364/OE.446283

Citation

Sun, H, Liu, X, Zhao, L, Jia, J, Jiang, C, Xiao, J, Chen, Y, Xu, L, Duan, Z, Rao, P & Sun, S 2022, 'Mid-long wavelength infrared absorptance of hyperdoped silicon via femtosecond laser microstructuring', Optics Express, vol. 30, no. 2, pp. 1808-1817. https://doi.org/10.1364/OE.446283

Permanent link to this item

https://urn.fi/URN:NBN:fi:aalto-202201131189

Collections

[article-cris] Sähkötekniikan korkeakoulu / ELEC