Mid-long wavelength infrared absorptance of hyperdoped silicon via femtosecond laser microstructuring
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2022-01-17
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Language
en
Pages
10
1808-1817
1808-1817
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Optics Express, Volume 30, issue 2
Abstract
Hyperdoped silicon (hSi) fabricated via femtosecond laser irradiation has emerged as a promising photoelectric material with strong broadband infrared (IR) absorption. In this work, we measured the optical absorptance of the hSi in the wavelength of 0.3–16.7 µm. Unlike the near to mid wavelength IR absorption, the mid-long wavelength IR (M–LWIR) absorption is heavily dependent on the surface morphology and the dopants. Furthermore, calculations based on coherent potential approximation (CPA) reveal the origin of free carrier absorption, which plays an important role in the M–LWIR absorption. As a result, a more comprehensive picture of the IR absorption mechanism is drawn for the optoelectronic applications of the hSi.Description
Keywords
Femtosecond lasers, Laser beams, Laser irradiation, Optical absorption, Scanning electron microscopy, Solar cells
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Citation
Sun, H, Liu, X, Zhao, L, Jia, J, Jiang, C, Xiao, J, Chen, Y, Xu, L, Duan, Z, Rao, P & Sun, S 2022, ' Mid-long wavelength infrared absorptance of hyperdoped silicon via femtosecond laser microstructuring ', Optics Express, vol. 30, no. 2, pp. 1808-1817 . https://doi.org/10.1364/OE.446283