Characterization of Heavily Irradiated Dielectrics for Pixel Sensors Coupling Insulator Applications

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dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorBharthuar, S.en_US
dc.contributor.authorGolovleva, M.en_US
dc.contributor.authorBezak, M.en_US
dc.contributor.authorBrücken, E.en_US
dc.contributor.authorGädda, A.en_US
dc.contributor.authorHärkönen, J.en_US
dc.contributor.authorKaradzhinova-Ferrer, A.en_US
dc.contributor.authorKramarenko, N.en_US
dc.contributor.authorKirschenmann, S.en_US
dc.contributor.authorKoponen, Pirkittaen_US
dc.contributor.authorLuukka, P.en_US
dc.contributor.authorMizohata, K.en_US
dc.contributor.authorOtt, J.en_US
dc.contributor.authorTuominen, E.en_US
dc.contributor.departmentDepartment of Electronics and Nanoengineeringen
dc.contributor.groupauthorHele Savin Groupen
dc.contributor.organizationHelsinki Institute of Physicsen_US
dc.contributor.organizationUniversity of Helsinkien_US
dc.date.accessioned2022-02-16T07:39:28Z
dc.date.available2022-02-16T07:39:28Z
dc.date.issued2022-01-19en_US
dc.descriptionFunding Information: The research is supported by the Magnus Ehrnrooth Foundation (research grant number 200 011). This study was partially funded by the Academy of Finland (project number 314 473), ?Multi-spectral photon-counting for medical imaging and beam characterization.? Publisher Copyright: Copyright © 2022 Bharthuar, Golovleva, Bezak, Brücken, Gädda, Härkönen, Karadzhinova-Ferrer, Kramarenko, Kirschenmann, Koponen, Luukka, Mizohata, Ott and Tuominen.
dc.description.abstractAn increase in the radiation levels during the high-luminosity operation of the Large Hadron Collider calls for the development of silicon-based pixel detectors that are used for particle tracking and vertex reconstruction. Unlike the conventionally used conductively coupled (DC-coupled) detectors that are prone to an increment in leakage currents due to radiation, capacitively coupled (AC-coupled) detectors are anticipated to be in operation in future collider experiments suitable for tracking purposes. The implementation of AC-coupling to micro-scale pixel sensor areas enables one to provide an enhanced isolation of radiation-induced leakage currents. The motivation of this study is the development of new generation capacitively coupled (AC-coupled) pixel sensors with coupling insulators having good dielectric strength and radiation hardness simultaneously. The AC-coupling insulator thin films were aluminum oxide (Al2O3) and hafnium oxide (HfO2) grown by the atomic layer deposition (ALD) method. A comparison study was performed based on the dielectric material used in MOS, MOSFET, and AC-coupled pixel prototypes processed on high resistivity p-type Magnetic Czochralski silicon (MCz-Si) substrates. Post-irradiation studies with 10 MeV protons up to a fluence of 1015 protons/cm2 suggest HfO2 to be a better candidate as it provides higher sensitivity with negative charge accumulation on irradiation. Furthermore, even though the nature of the dielectric does not affect the electric field within the AC-coupled pixel sensor, samples with HfO2 are comparatively less susceptible to undergo an early breakdown due to irradiation. Edge-transient current technique (e-TCT) measurements show a prominent double-junction effect as expected in heavily irradiated p-type detectors, in accordance with the simulation studies.en
dc.description.versionPeer revieweden
dc.format.mimetypeapplication/pdfen_US
dc.identifier.citationBharthuar, S, Golovleva, M, Bezak, M, Brücken, E, Gädda, A, Härkönen, J, Karadzhinova-Ferrer, A, Kramarenko, N, Kirschenmann, S, Koponen, P, Luukka, P, Mizohata, K, Ott, J & Tuominen, E 2022, ' Characterization of Heavily Irradiated Dielectrics for Pixel Sensors Coupling Insulator Applications ', Frontiers in Materials, vol. 8, 769947 . https://doi.org/10.3389/fmats.2021.769947en
dc.identifier.doi10.3389/fmats.2021.769947en_US
dc.identifier.issn2296-8016
dc.identifier.otherPURE UUID: 1f02cb3c-823e-481e-93ff-0c51fbdb6a44en_US
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/1f02cb3c-823e-481e-93ff-0c51fbdb6a44en_US
dc.identifier.otherPURE LINK: http://www.scopus.com/inward/record.url?scp=85123934792&partnerID=8YFLogxKen_US
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/79421151/Bharthuar_Characterization_of_heavily_irradiated_FiM.pdfen_US
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/113012
dc.identifier.urnURN:NBN:fi:aalto-202202161904
dc.language.isoenen
dc.publisherFRONTIERS MEDIA SA
dc.relation.ispartofseriesFrontiers in materialsen
dc.relation.ispartofseriesVolume 8en
dc.rightsopenAccessen
dc.subject.keywordAC-pixel sensorsen_US
dc.subject.keywordALD (atomic layer deposition)en_US
dc.subject.keywordaluminaen_US
dc.subject.keywordhafniaen_US
dc.subject.keywordmagnetic Czochralskien_US
dc.subject.keywordMOS capacitoren_US
dc.subject.keywordMOSFETen_US
dc.subject.keywordradiation hardnessen_US
dc.titleCharacterization of Heavily Irradiated Dielectrics for Pixel Sensors Coupling Insulator Applicationsen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.versionpublishedVersion
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