Synthesis and Properties of Monolayer MnSe with Unusual Atomic Structure and Antiferromagnetic Ordering
No Thumbnail Available
Access rights
openAccess
URL
Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
This publication is imported from Aalto University research portal.
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
Other link related to publication (opens in new window)
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
Other link related to publication (opens in new window)
Date
2021-08-24
Department
Department of Applied Physics
Major/Subject
Mcode
Degree programme
Language
en
Pages
Series
ACS Nano
Abstract
Transition metal chalcogenides (TMCs) are a large family of 2D materials that are currently attracting intense interest. TMCs with 3d transition metals provide opportunities for introducing magnetism and strong correlations into the material with manganese standing out as a particularly attractive option due to its large magnetic moment. Here we report on the successful synthesis of monolayer manganese selenide on a NbSe2 substrate. Using scanning tunneling microscopy and spectroscopy experiments and global structure prediction calculations at the density functional theory level, we identify the atomic structure and magnetic and electronic properties of the layered Mn2Se2 phase. The structure is similar to the layered bulk phase of CuI or a buckled bilayer of h-BN. Interestingly, our results suggest that the monolayer is antiferromagnetic, but with an unusual out-of-plane ordering that results in two ferromagnetic planes.Description
| openaire: EC/H2020/788185/EU//E-DESIGN
Keywords
Other note
Citation
Aapro, M, Huda, M N, Jeyakumar, K, Shawulienu, K, Ganguli, S C, Gonzalez Herrero, H, Huang, X, Liljeroth, P & Komsa, H-P 2021, ' Synthesis and Properties of Monolayer MnSe with Unusual Atomic Structure and Antiferromagnetic Ordering ', ACS Nano, vol. 15, no. 8, pp. 13794–13802 . https://doi.org/10.1021/acsnano.1c05532