Thermal Boundary Conductance of Direct Bonded Aluminum Nitride to Silicon Interfaces

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Volume Title

A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Date

2024-04-23

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Mcode

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en

Pages

7

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ACS Applied Electronic Materials

Abstract

Heat accumulation and self-heating have become key issues in microelectronics owing to the ever-decreasing size of components and the move toward three-dimensional structures. A significant challenge for solving these issues is thermally isolating materials, such as silicon dioxide (SiO2), which are commonly used in microelectronics. The silicon-on-insulator (SOI) structure is a great demonstrator of the limitations of SiO2 as the low thermal conductivity insulator prevents heat dissipation through the bottom of a device built on a SOI wafer. Replacing SiO2 with a more thermally conductive material could yield immediate results for improved heat dissipation of SOI structures. However, the introduction of alternate materials creates unknown interfaces, which can have a large impact on the overall thermal conductivity of the structure. In this work, we studied a direct bonded AlN-to-SOI wafer (AlN-SOI) by measuring the thermal conductivity of AlN and the thermal boundary conductance (TBC) of silicon (Si)/AlN and Si/SiO2/aluminum-oxygen-nitrogen (AlON)/AlN interfaces, the latter of which were formed during plasma-activated bonding. The results show that the AlN-SOI possesses superior thermal properties to those of a traditional SOI wafer, with the thermal conductivity of AlN measured at roughly 40 W m-1 K-1 and the TBC of both interfaces at roughly 100 MW m-2 K-1. These results show that AlN-SOI is a very promising structure for improving heat dissipation in future microelectronics.

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Publisher Copyright: © 2024 The Authors. Published by American Chemical Society. | openaire: EC/H2020/826653/EU//NewControl

Keywords

aluminum nitride, silicon-on-insulator, thermal boundary conductance, thermal conductivity, time-domain thermoreflectance

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Citation

Nieminen, T, Koskinen, T, Kornienko, V, Ross, G & Paulasto-Kröckel, M 2024, ' Thermal Boundary Conductance of Direct Bonded Aluminum Nitride to Silicon Interfaces ', ACS Applied Electronic Materials, vol. 6, no. 4, pp. 2413-2419 . https://doi.org/10.1021/acsaelm.4c00068