Identification of vacancy-impurity complexes in highly n-type Si
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
1999-03-01
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en
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4
1883-1886
1883-1886
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PHYSICAL REVIEW LETTERS, Volume 82, issue 9
Abstract
We show that the detailed atomic structure of vacancy-impurity complexes in Si can be experimentally determined by combining positron lifetime and electron momentum distribution measurements. The vacancies complexed with a single impurity, V−P and V−As, are identified in electron irradiated Si. The formation of native vacancy defects is observed in highly As-doped Si at the doping level of 1020cm−3. The defects are identified as monovacancies surrounded by three As atoms. The formation of a V−As3 complex is consistent with the theoretical descriptions of As diffusion and electrical deactivation in highly As-doped Si.Description
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Saarinen , K , Nissilä , J , Kauppinen , H , Hakala , M , Puska , M J , Hautojärvi , P & Corbel , C 1999 , ' Identification of vacancy-impurity complexes in highly n-type Si ' , Physical Review Letters , vol. 82 , no. 9 , pp. 1883-1886 . https://doi.org/10.1103/PhysRevLett.82.1883