Interaction of Silicon Dangling Bonds with Insulating Surfaces
Loading...
Access rights
© 2004 American Physical Society (APS). This is the accepted version of the following article: Foster, Adam S. ; Gal, A. Y. ; Gale, J. D. ; Lee, Y. J. ; Nieminen, R. M. ; Shluger, A. L.. 2004. Interaction of Silicon Dangling Bonds with Insulating Surfaces. Physical Review Letters. Volume 92, Issue 3. 036101/1-4. ISSN 0031-9007 (printed). DOI: 10.1103/physrevlett.92.036101, which has been published in final form at http://journals.aps.org/prl/pdf/10.1103/PhysRevLett.92.036101/.
Final published version
URL
Journal Title
Journal ISSN
Volume Title
School of Science |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Unless otherwise stated, all rights belong to the author. You may download, display and print this publication for Your own personal use. Commercial use is prohibited.
Date
Major/Subject
Mcode
Degree programme
Language
en
Pages
036101/1-4
Series
Physical Review Letters, Volume 92, Issue 3
Abstract
We use first principles density functional theory calculations to study the interaction of a model dangling bond silicon tip with the surfaces of CaF2, Al2O3, TiO2, and MgO. In each case the strongest interaction is with the highest anions in the surface. We show that this is due to the onset of chemical bonding with the surface anions, which can be controlled by an electric field across the system. Combining our results and previous studies on semiconductor surfaces suggests that using dangling bond Si tips can provide immediate identification of surface species in atomically resolved noncontact atomic force microscopy and facilitate selective measurements of short-range interactions with surface sites.Description
Keywords
Other note
Citation
Foster, Adam S. & Gal, A. Y. & Gale, J. D. & Lee, Y. J. & Nieminen, R. M. & Shluger, A. L.. 2004. Interaction of Silicon Dangling Bonds with Insulating Surfaces. Physical Review Letters. Volume 92, Issue 3. 036101/1-4. ISSN 0031-9007 (printed). DOI: 10.1103/physrevlett.92.036101.