Electron–phonon heat transport and electronic thermal conductivity in heavily doped silicon-on-insulator film
Loading...
Journal Title
Journal ISSN
Volume Title
School of Science |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Unless otherwise stated, all rights belong to the author. You may download, display and print this publication for Your own personal use. Commercial use is prohibited.
Date
2003
Major/Subject
Mcode
Degree programme
Language
en
Pages
3201-3205
Series
Journal of Applied Physics, Volume 94, Issue 5
Abstract
Electron–phonon interaction and electronic thermal conductivity have been investigated in heavily doped silicon at subKelvin temperatures. The heat flow between electron and phonon systems is found to be proportional to T6. Utilization of a superconductor–semiconductor–superconductor thermometer enables a precise measurement of electron and substrate temperatures. The electronic thermal conductivity is consistent with the Wiedemann–Franz law.Description
Keywords
thermal conductivity, doping, silicon doping, heat transport, phonons, electrons, superconductors
Citation
Kivinen, P. & Savin, A. & Zgirski, M. & Törmä, P. & Pekola, Jukka & Prunnila, M. & Ahopelto, J. 2003. Electron–phonon heat transport and electronic thermal conductivity in heavily doped silicon-on-insulator film. Journal of Applied Physics. Volume 94, Issue 5. 3201-3205. ISSN 0021-8979 (printed). DOI: 10.1063/1.1592627.
