Electron–phonon heat transport and electronic thermal conductivity in heavily doped silicon-on-insulator film
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© 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, Volume 94, Issue 5 and may be found at http://scitation.aip.org/content/aip/journal/jap/94/5/10.1063/1.1592627
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2003
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Mcode
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Language
en
Pages
3201-3205
Series
Journal of Applied Physics, Volume 94, Issue 5
Abstract
Electron–phonon interaction and electronic thermal conductivity have been investigated in heavily doped silicon at subKelvin temperatures. The heat flow between electron and phonon systems is found to be proportional to T6. Utilization of a superconductor–semiconductor–superconductor thermometer enables a precise measurement of electron and substrate temperatures. The electronic thermal conductivity is consistent with the Wiedemann–Franz law.Description
Keywords
thermal conductivity, doping, silicon doping, heat transport, phonons, electrons, superconductors
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Citation
Kivinen, P. & Savin, A. & Zgirski, M. & Törmä, P. & Pekola, Jukka & Prunnila, M. & Ahopelto, J. 2003. Electron–phonon heat transport and electronic thermal conductivity in heavily doped silicon-on-insulator film. Journal of Applied Physics. Volume 94, Issue 5. 3201-3205. ISSN 0021-8979 (printed). DOI: 10.1063/1.1592627.