Aggregation Kinetics of Thermal Double Donors in Silicon

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorLee, Young Joo
dc.contributor.authorvon Boehm, J.
dc.contributor.authorPesola, M.
dc.contributor.authorNieminen, Risto M.
dc.contributor.departmentTeknillisen fysiikan laitosfi
dc.contributor.departmentDepartment of Applied Physicsen
dc.contributor.schoolPerustieteiden korkeakoulufi
dc.contributor.schoolSchool of Scienceen
dc.date.accessioned2015-09-02T09:02:00Z
dc.date.available2015-09-02T09:02:00Z
dc.date.issued2001
dc.description.abstractA general kinetic model based on accurate density-functional-theoretic total-energy calculations is introduced to describe the aggregation kinetics of oxygen-related thermal double donors (TDD's) in silicon. The calculated kinetics, which incorporates the reactions of associations, dissociations, and isomerizations of all relevant oxygen complexes, is in agreement with experimental annealing studies. The aggregation of TDD's takes place through parallel-consecutive reactions where both mobile oxygen dimers and fast migrating chainlike TDD's capture interstitial oxygen atoms.en
dc.description.versionPeer revieweden
dc.format.extent3060-3063
dc.format.mimetypeapplication/pdfen
dc.identifier.citationLee, Young Joo & von Boehm, J. & Pesola, M. & Nieminen, Risto M. 2001. Aggregation Kinetics of Thermal Double Donors in Silicon. Physical Review Letters. Volume 86, Issue 14. 3060-3063. ISSN 0031-9007 (printed). DOI: 10.1103/physrevlett.86.3060.en
dc.identifier.doi10.1103/physrevlett.86.3060
dc.identifier.issn0031-9007 (printed)
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/17560
dc.identifier.urnURN:NBN:fi:aalto-201509024179
dc.language.isoenen
dc.publisherAmerican Physical Society (APS)en
dc.relation.ispartofseriesPhysical Review Lettersen
dc.relation.ispartofseriesVolume 86, Issue 14
dc.rights© 2001 American Physical Society (APS). This is the accepted version of the following article: Lee, Young Joo & von Boehm, J. & Pesola, M. & Nieminen, Risto M. 2001. Aggregation Kinetics of Thermal Double Donors in Silicon. Physical Review Letters. Volume 86, Issue 14. 3060-3063. ISSN 0031-9007 (printed). DOI: 10.1103/physrevlett.86.3060, which has been published in final form at http://journals.aps.org/prl/abstract/10.1103/PhysRevLett.86.3060.en
dc.rights.holderAmerican Physical Society (APS)
dc.subject.keywordsiliconen
dc.subject.keywordthermal double donorsen
dc.subject.otherPhysicsen
dc.titleAggregation Kinetics of Thermal Double Donors in Siliconen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.dcmitypetexten
dc.type.versionFinal published versionen

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