Aggregation Kinetics of Thermal Double Donors in Silicon
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© 2001 American Physical Society (APS). This is the accepted version of the following article: Lee, Young Joo & von Boehm, J. & Pesola, M. & Nieminen, Risto M. 2001. Aggregation Kinetics of Thermal Double Donors in Silicon. Physical Review Letters. Volume 86, Issue 14. 3060-3063. ISSN 0031-9007 (printed). DOI: 10.1103/physrevlett.86.3060, which has been published in final form at http://journals.aps.org/prl/abstract/10.1103/PhysRevLett.86.3060.
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Date
2001
Major/Subject
Mcode
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Language
en
Pages
3060-3063
Series
Physical Review Letters, Volume 86, Issue 14
Abstract
A general kinetic model based on accurate density-functional-theoretic total-energy calculations is introduced to describe the aggregation kinetics of oxygen-related thermal double donors (TDD's) in silicon. The calculated kinetics, which incorporates the reactions of associations, dissociations, and isomerizations of all relevant oxygen complexes, is in agreement with experimental annealing studies. The aggregation of TDD's takes place through parallel-consecutive reactions where both mobile oxygen dimers and fast migrating chainlike TDD's capture interstitial oxygen atoms.Description
Keywords
silicon, thermal double donors
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Citation
Lee, Young Joo & von Boehm, J. & Pesola, M. & Nieminen, Risto M. 2001. Aggregation Kinetics of Thermal Double Donors in Silicon. Physical Review Letters. Volume 86, Issue 14. 3060-3063. ISSN 0031-9007 (printed). DOI: 10.1103/physrevlett.86.3060.