Impact of ALD grown passivation layers on silicon nitride based integrated optical devices for very-near-infrared wavelengths
dc.contributor | Aalto-yliopisto | fi |
dc.contributor | Aalto University | en |
dc.contributor.author | Khanna, Amit | en_US |
dc.contributor.author | Subramanian, Ananth | en_US |
dc.contributor.author | Häyrinen, Markus | en_US |
dc.contributor.author | Selvaraja, Shankar | en_US |
dc.contributor.author | Verheyen, Peter | en_US |
dc.contributor.author | Van Thourhout, Dries | en_US |
dc.contributor.author | Honkanen, Seppo | en_US |
dc.contributor.author | Lipsanen, Harri | en_US |
dc.contributor.author | Baets, Roel | en_US |
dc.contributor.department | Department of Micro and Nanosciences | en |
dc.contributor.groupauthor | Harri Lipsanen Group | en |
dc.date.accessioned | 2018-08-01T12:39:37Z | |
dc.date.available | 2018-08-01T12:39:37Z | |
dc.date.issued | 2014 | en_US |
dc.description.version | Peer reviewed | en |
dc.format.extent | 9 | |
dc.format.extent | 5684-5692 | |
dc.format.mimetype | application/pdf | en_US |
dc.identifier.citation | Khanna, A, Subramanian, A, Häyrinen, M, Selvaraja, S, Verheyen, P, Van Thourhout, D, Honkanen, S, Lipsanen, H & Baets, R 2014, ' Impact of ALD grown passivation layers on silicon nitride based integrated optical devices for very-near-infrared wavelengths ', Optics Express, vol. 22, no. 5, pp. 5684-5692 . https://doi.org/10.1364/OE.22.005684 | en |
dc.identifier.doi | 10.1364/OE.22.005684 | en_US |
dc.identifier.issn | 1094-4087 | |
dc.identifier.other | PURE UUID: 28712a8f-22db-4f02-8ffe-81f061196a5c | en_US |
dc.identifier.other | PURE ITEMURL: https://research.aalto.fi/en/publications/28712a8f-22db-4f02-8ffe-81f061196a5c | en_US |
dc.identifier.other | PURE LINK: http://dx.doi.org/10.1364/OE.22.005684 | en_US |
dc.identifier.other | PURE FILEURL: https://research.aalto.fi/files/26755811/oe_22_5_5684.pdf | en_US |
dc.identifier.uri | https://aaltodoc.aalto.fi/handle/123456789/32704 | |
dc.identifier.urn | URN:NBN:fi:aalto-201808014104 | |
dc.language.iso | en | en |
dc.relation.ispartofseries | OPTICS EXPRESS | en |
dc.relation.ispartofseries | Volume 22, issue 5 | en |
dc.rights | openAccess | en |
dc.title | Impact of ALD grown passivation layers on silicon nitride based integrated optical devices for very-near-infrared wavelengths | en |
dc.type | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä | fi |
dc.type.version | publishedVersion |