Analysis of the Atomic Layer Deposited Al2O3 field-effect passivation in black silicon

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Authors

Date

2015

Department

Department of Micro and Nanosciences

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Mcode

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Language

en

Pages

5

Series

Solar Energy Materials and Solar Cells, Volume 142, pp. 29-33

Description

Keywords

Al2O3, atomic layer deposition, nano-texturing, negative charge, reactive ion etching, surface passivation

Other note

DOI

10.1016/j.solmat.2015.05.027

Citation

von Gastrow, G, Alcubilla, R, Ortega, P, Yli-Koski, M, Conesa-Boj, S, Fontcuberta i Morral, A & Savin, H 2015, 'Analysis of the Atomic Layer Deposited Al2O3 field-effect passivation in black silicon', Solar Energy Materials and Solar Cells, vol. 142, pp. 29-33. https://doi.org/10.1016/j.solmat.2015.05.027

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https://urn.fi/URN:NBN:fi:aalto-201701191104

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[article-cris] Sähkötekniikan korkeakoulu / ELEC