Comparison of epitaxial thin layer GaN and InP passivations on InGaAs/GaAs near-surface quantum wells
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© 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/jap
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School of Electrical Engineering |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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221112/1-3
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Applied Physics Letters, Volume 88, Issue 22
Abstract
The optical properties of the in situepitaxialGaN and InP passivated InGaAs∕GaAs near-surface quantum wells, which were fabricated by metal organic vapor phase epitaxy, are investigated. Low-temperature photoluminescence(PL), time-resolved photoluminescence, and photoreflectance are used to study the passivation effect. Both GaN and InPpassivations are observed to significantly enhance the PL intensity and carrier lifetime and to reduce the surface electrical fields. Comparison of the methods shows that the epitaxialInPpassivation is more effective. However, epitaxialGaN and nitridation methods are comparable with InPpassivation.Description
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Aierken, A. & Riikonen, J. & Sormunen, J. & Sopanen, M. & Lipsanen, Harri. 2006. Comparison of epitaxial thin layer GaN and InP passivations on InGaAs/GaAs near-surface quantum wells. Applied Physics Letters. Volume 88, Issue 22. P. 221112/1-3. ISSN 0003-6951 (printed). DOI: 10.1063/1.2208557.