1000 V:n vertikaalinen IGBT
dc.contributor | Aalto-yliopisto | fi |
dc.contributor | Aalto University | en |
dc.contributor.advisor | Eränen, Simo | |
dc.contributor.author | Blomberg, Martti | |
dc.contributor.department | Sähkötekniikan osasto | fi |
dc.contributor.school | Teknillinen korkeakoulu | fi |
dc.contributor.school | Helsinki University of Technology | en |
dc.contributor.supervisor | Sinkkonen, Juha | |
dc.date.accessioned | 2021-04-14T14:11:51Z | |
dc.date.available | 2021-04-14T14:11:51Z | |
dc.date.issued | 1991 | |
dc.format.extent | 98 | |
dc.identifier.uri | https://aaltodoc.aalto.fi/handle/123456789/105027 | |
dc.identifier.urn | URN:NBN:fi:aalto-202104144317 | |
dc.language.iso | fi | en |
dc.programme.major | Elektronifysiikka | fi |
dc.programme.mcode | Ele-69 | fi |
dc.rights.accesslevel | closedAccess | |
dc.subject.keyword | DMOS | en |
dc.subject.keyword | DMOS | fi |
dc.subject.keyword | double diffusion | en |
dc.subject.keyword | IGBT | fi |
dc.subject.keyword | IGBT | en |
dc.subject.keyword | kaksoisdiffuusio | fi |
dc.subject.keyword | latch-up | en |
dc.subject.keyword | latch-up | fi |
dc.title | 1000 V:n vertikaalinen IGBT | fi |
dc.title | 1000 Volts Vertical IGBT | en |
dc.type.okm | G3 Lisensiaatintutkimus | |
dc.type.ontasot | Licentiate thesis | en |
dc.type.ontasot | Lisensiaatintyö | fi |
local.aalto.digiauth | ask | |
local.aalto.digifolder | Aalto_32704 | |
local.aalto.idinssi | 6675 | |
local.aalto.openaccess | no |