Electronically induced trapping of hydrogen by impurities in niobium

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dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorManninen, M.
dc.contributor.authorPuska, Martti J.
dc.contributor.authorNieminen, Risto M.
dc.contributor.authorJena, P.
dc.contributor.departmentDepartment of Applied Physicsen
dc.contributor.departmentTeknillisen fysiikan laitosfi
dc.contributor.schoolPerustieteiden korkeakoulufi
dc.contributor.schoolSchool of Scienceen
dc.date.accessioned2015-08-31T09:01:11Z
dc.date.available2015-08-31T09:01:11Z
dc.date.issued1984
dc.description.abstractThe binding energies of hydrogen and its isotopes to substitutional impurities Ti, Cr, and V in niobium have been calculated. The hydrogen-metal interaction is based on the effective-medium theory. The wave mechanics of the hydrogenic interstitials are explicity dealt with, and the lattice distortion created by the hydrogen is incorporated through the method of lattice statics. The difference in the electronic structure between impurity and host atoms is shown to be largely responsible for the binding of hydrogen to the impurities. The results are in agreement with recent inelastic neutron scattering experiments.en
dc.description.versionPeer revieweden
dc.format.extent1065-1068
dc.format.mimetypeapplication/pdfen
dc.identifier.citationManninen, M. & Puska, M. J. & Nieminen, Risto M. & Jena, P. 1984. Electronically induced trapping of hydrogen by impurities in niobium. Physical Review B. Volume 30, Issue 2. 1065-1068. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.30.1065.en
dc.identifier.doi10.1103/physrevb.30.1065
dc.identifier.issn1550-235X (electronic)
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/17520
dc.identifier.urnURN:NBN:fi:aalto-201508314138
dc.language.isoenen
dc.publisherAmerican Physical Society (APS)en
dc.relation.ispartofseriesPhysical Review Ben
dc.relation.ispartofseriesVolume 30, Issue 2
dc.rights© 1984 American Physical Society (APS). This is the accepted version of the following article: Manninen, M. & Puska, M. J. & Nieminen, Risto M. & Jena, P. 1984. Electronically induced trapping of hydrogen by impurities in niobium. Physical Review B. Volume 30, Issue 2. 1065-1068. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.30.1065, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.30.1065.en
dc.rights.holderAmerican Physical Society (APS)
dc.subject.keywordniobiumen
dc.subject.keywordhydrogenen
dc.subject.otherPhysicsen
dc.titleElectronically induced trapping of hydrogen by impurities in niobiumen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.dcmitypetexten
dc.type.versionFinal published versionen

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