Positron states at vacancy-impurity pairs in semiconductors
dc.contributor | Aalto-yliopisto | fi |
dc.contributor | Aalto University | en |
dc.contributor.author | Mäkinen, S. | |
dc.contributor.author | Puska, Martti J. | |
dc.contributor.department | Teknillisen fysiikan laitos | fi |
dc.contributor.department | Department of Applied Physics | en |
dc.contributor.school | Perustieteiden korkeakoulu | fi |
dc.contributor.school | School of Science | en |
dc.date.accessioned | 2015-09-19T09:01:38Z | |
dc.date.available | 2015-09-19T09:01:38Z | |
dc.date.issued | 1989 | |
dc.description.abstract | Positron states at pure monovacancies and divacancies and vacancy-phosphorus pairs in Si as well as at As vacancies and As-vacancy–As-antisite pairs in GaAs are calculated. The dependence of the positron lifetime on the lattice relaxation around the defects is studied, and the effects related to the screening of positrons are discussed. The calculations are based on superimposing free atoms. The ability of the method to describe positron states at charged defects is demonstrated. | en |
dc.description.version | Peer reviewed | en |
dc.format.extent | 12523-12526 | |
dc.format.mimetype | application/pdf | en |
dc.identifier.citation | Mäkinen, S. & Puska, Martti J. 1989. Positron states at vacancy-impurity pairs in semiconductors. Physical Review B. Volume 40, Issue 18. 12523-12526. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.40.12523. | en |
dc.identifier.doi | 10.1103/physrevb.40.12523 | |
dc.identifier.issn | 1550-235X (electronic) | |
dc.identifier.uri | https://aaltodoc.aalto.fi/handle/123456789/17848 | |
dc.identifier.urn | URN:NBN:fi:aalto-201509184447 | |
dc.language.iso | en | en |
dc.publisher | American Physical Society (APS) | en |
dc.relation.ispartofseries | Physical Review B | en |
dc.relation.ispartofseries | Volume 40, Issue 18 | |
dc.rights | © 1989 American Physical Society (APS). This is the accepted version of the following article: Mäkinen, S. & Puska, Martti J. 1989. Positron states at vacancy-impurity pairs in semiconductors. Physical Review B. Volume 40, Issue 18. 12523-12526. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.40.12523, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.40.12523. | en |
dc.rights.holder | American Physical Society (APS) | |
dc.subject.keyword | positron states | en |
dc.subject.keyword | annihilation | en |
dc.subject.other | Physics | en |
dc.title | Positron states at vacancy-impurity pairs in semiconductors | en |
dc.type | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä | fi |
dc.type.dcmitype | text | en |
dc.type.version | Final published version | en |
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