Positron states at vacancy-impurity pairs in semiconductors

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorMäkinen, S.
dc.contributor.authorPuska, Martti J.
dc.contributor.departmentTeknillisen fysiikan laitosfi
dc.contributor.departmentDepartment of Applied Physicsen
dc.contributor.schoolPerustieteiden korkeakoulufi
dc.contributor.schoolSchool of Scienceen
dc.date.accessioned2015-09-19T09:01:38Z
dc.date.available2015-09-19T09:01:38Z
dc.date.issued1989
dc.description.abstractPositron states at pure monovacancies and divacancies and vacancy-phosphorus pairs in Si as well as at As vacancies and As-vacancy–As-antisite pairs in GaAs are calculated. The dependence of the positron lifetime on the lattice relaxation around the defects is studied, and the effects related to the screening of positrons are discussed. The calculations are based on superimposing free atoms. The ability of the method to describe positron states at charged defects is demonstrated.en
dc.description.versionPeer revieweden
dc.format.extent12523-12526
dc.format.mimetypeapplication/pdfen
dc.identifier.citationMäkinen, S. & Puska, Martti J. 1989. Positron states at vacancy-impurity pairs in semiconductors. Physical Review B. Volume 40, Issue 18. 12523-12526. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.40.12523.en
dc.identifier.doi10.1103/physrevb.40.12523
dc.identifier.issn1550-235X (electronic)
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/17848
dc.identifier.urnURN:NBN:fi:aalto-201509184447
dc.language.isoenen
dc.publisherAmerican Physical Society (APS)en
dc.relation.ispartofseriesPhysical Review Ben
dc.relation.ispartofseriesVolume 40, Issue 18
dc.rights© 1989 American Physical Society (APS). This is the accepted version of the following article: Mäkinen, S. & Puska, Martti J. 1989. Positron states at vacancy-impurity pairs in semiconductors. Physical Review B. Volume 40, Issue 18. 12523-12526. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.40.12523, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.40.12523.en
dc.rights.holderAmerican Physical Society (APS)
dc.subject.keywordpositron statesen
dc.subject.keywordannihilationen
dc.subject.otherPhysicsen
dc.titlePositron states at vacancy-impurity pairs in semiconductorsen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.dcmitypetexten
dc.type.versionFinal published versionen

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