Positron states at vacancy-impurity pairs in semiconductors
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© 1989 American Physical Society (APS). This is the accepted version of the following article: Mäkinen, S. & Puska, Martti J. 1989. Positron states at vacancy-impurity pairs in semiconductors. Physical Review B. Volume 40, Issue 18. 12523-12526. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.40.12523, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.40.12523.
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Authors
Date
1989
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Mcode
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Language
en
Pages
12523-12526
Series
Physical Review B, Volume 40, Issue 18
Abstract
Positron states at pure monovacancies and divacancies and vacancy-phosphorus pairs in Si as well as at As vacancies and As-vacancy–As-antisite pairs in GaAs are calculated. The dependence of the positron lifetime on the lattice relaxation around the defects is studied, and the effects related to the screening of positrons are discussed. The calculations are based on superimposing free atoms. The ability of the method to describe positron states at charged defects is demonstrated.Description
Keywords
positron states, annihilation
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Citation
Mäkinen, S. & Puska, Martti J. 1989. Positron states at vacancy-impurity pairs in semiconductors. Physical Review B. Volume 40, Issue 18. 12523-12526. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.40.12523.