Reduction of the thermal conductivity in free-standing silicon nano-membranes investigated by non-invasive Raman thermometry
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2014
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Language
en
Pages
1-6
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APL MATERIALS, Volume 2, issue 1
Abstract
We report on the reduction of the thermal conductivity in ultra-thin suspended Si membranes with high crystalline quality. A series of membranes with thicknesses ranging from 9 nm to 1.5 μm was investigated using Raman thermometry, a novel contactless technique for thermal conductivity determination. A systematic decrease in the thermal conductivity was observed as reducing the thickness, which is explained using the Fuchs-Sondheimer model through the influence of phonon boundary scattering at the surfaces. The thermal conductivity of the thinnest membrane with d = 9 nm resulted in (9 ± 2) W/mK, thus approaching the amorphous limit but still maintaining a high crystalline quality.Description
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Chávez-Ángel, E, Reparaz, J S, Gomis-Bresco, J, Wagner, M R, Cuffe, J, Graczykowski, B, Shchepetov, A, Jiang, H, Prunnila, M, Ahopelto, J, Alzina, F & Sotomayor Torres, C M 2014, ' Reduction of the thermal conductivity in free-standing silicon nano-membranes investigated by non-invasive Raman thermometry ', APL Materials, vol. 2, no. 1, 012113, pp. 1-6 . https://doi.org/10.1063/1.4861796