Vacancy defects in epitaxial thin film CuGaSe2 and CuInSe2
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© 2012 American Physical Society (APS). This is the accepted version of the following article: Korhonen, E. & Kuitunen, K. & Tuomisto, Filip & Urbaniak, A. & Igalson, M. & Larsen, J. & Gutay, L. & Siebentritt, S. & Tomm, Y. 2012. Vacancy defects in epitaxial thin film CuGaSe2 and CuInSe2. Physical Review B. Volume 86, Issue 6. 064102/1-5. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.86.064102, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.86.064102.
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School of Science |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2012
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Mcode
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Language
en
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064102/1-5
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Physical Review B, Volume 86, Issue 6
Abstract
Epitaxial thin film CuGaSe2 and CuInSe2 samples grown on GaAs substrates with varying [Cu]/[Ga,In] ratios were studied using positron annihilation Doppler-broadening spectroscopy and were compared to bulk crystals. We find both Cu monovacancies and Cu-Se divacancies in CuInSe2, whereas, in CuGaSe2, the only observed vacancy defect is the Cu-Se divacancy.Description
Keywords
CGS, CIS, CIGS, positrons
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Citation
Korhonen, E. & Kuitunen, K. & Tuomisto, Filip & Urbaniak, A. & Igalson, M. & Larsen, J. & Gutay, L. & Siebentritt, S. & Tomm, Y. 2012. Vacancy defects in epitaxial thin film CuGaSe2 and CuInSe2. Physical Review B. Volume 86, Issue 6. 064102/1-5. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.86.064102