Vacancy defects in epitaxial thin film CuGaSe2 and CuInSe2

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© 2012 American Physical Society (APS). This is the accepted version of the following article: Korhonen, E. & Kuitunen, K. & Tuomisto, Filip & Urbaniak, A. & Igalson, M. & Larsen, J. & Gutay, L. & Siebentritt, S. & Tomm, Y. 2012. Vacancy defects in epitaxial thin film CuGaSe2 and CuInSe2. Physical Review B. Volume 86, Issue 6. 064102/1-5. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.86.064102, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.86.064102.

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Journal Title

Journal ISSN

Volume Title

School of Science | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Date

2012

Major/Subject

Mcode

Degree programme

Language

en

Pages

064102/1-5

Series

Physical Review B, Volume 86, Issue 6

Abstract

Epitaxial thin film CuGaSe2 and CuInSe2 samples grown on GaAs substrates with varying [Cu]/[Ga,In] ratios were studied using positron annihilation Doppler-broadening spectroscopy and were compared to bulk crystals. We find both Cu monovacancies and Cu-Se divacancies in CuInSe2, whereas, in CuGaSe2, the only observed vacancy defect is the Cu-Se divacancy.

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Keywords

CGS, CIS, CIGS, positrons

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Citation

Korhonen, E. & Kuitunen, K. & Tuomisto, Filip & Urbaniak, A. & Igalson, M. & Larsen, J. & Gutay, L. & Siebentritt, S. & Tomm, Y. 2012. Vacancy defects in epitaxial thin film CuGaSe2 and CuInSe2. Physical Review B. Volume 86, Issue 6. 064102/1-5. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.86.064102