Effect of N and B doping on the growth of CVD diamond (100):H(2×1) surfaces
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Authors
Kaukonen, M.
Sitch, P.K.
Jungnickel, G.
Nieminen, R.M.
Pöykkö, S.
Porezag, D.
Franheim, Th.
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en
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Physical Review B, Volume 57, issue 16, pp. 9965-9970
Abstract
The doping of the chemical vapor deposition (CVD)-diamond (100):H(2×1) surface with B and N has been studied using the density-functional tight-binding method. In agreement with recent experimental results, B doping is found to lower the abstraction energies and remove diffusion barriers along the diamond growth pathway proposed by Harris and Goodwin [J. Phys. Chem. 97, 23 (1993)]. In contrast, the Harris-Goodwin mechanism is less favorable with N doping, casting doubt on its validity in this case. We therefore propose a growth pathway on N-doped CVD diamond (100):H(2×1) surfaces. This involves a dimer opening reaction and requires less H abstraction reactions compared to the Harris-Goodwin mechanism.Description
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Kaukonen, M, Sitch, P K, Jungnickel, G, Nieminen, R M, Pöykkö, S, Porezag, D & Franheim, T 1998, 'Effect of N and B doping on the growth of CVD diamond (100):H(2×1) surfaces', Physical Review B, vol. 57, no. 16, pp. 9965-9970. https://doi.org/10.1103/PhysRevB.57.9965