Effect of N and B doping on the growth of CVD diamond (100):H(2×1) surfaces
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
1998
Department
Department of Applied Physics
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Language
en
Pages
9965-9970
Series
Physical Review B, Volume 57, issue 16
Abstract
The doping of the chemical vapor deposition (CVD)-diamond (100):H(2×1) surface with B and N has been studied using the density-functional tight-binding method. In agreement with recent experimental results, B doping is found to lower the abstraction energies and remove diffusion barriers along the diamond growth pathway proposed by Harris and Goodwin [J. Phys. Chem. 97, 23 (1993)]. In contrast, the Harris-Goodwin mechanism is less favorable with N doping, casting doubt on its validity in this case. We therefore propose a growth pathway on N-doped CVD diamond (100):H(2×1) surfaces. This involves a dimer opening reaction and requires less H abstraction reactions compared to the Harris-Goodwin mechanism.Description
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Kaukonen , M , Sitch , P K , Jungnickel , G , Nieminen , R M , Pöykkö , S , Porezag , D & Franheim , T 1998 , ' Effect of N and B doping on the growth of CVD diamond (100):H(2×1) surfaces ' , Physical Review B , vol. 57 , no. 16 , pp. 9965-9970 . https://doi.org/10.1103/PhysRevB.57.9965