Carbon vacancy control in p+-n silicon carbide diodes for high voltage bipolar applications
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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5
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Journal of Physics D: Applied Physics, Volume 54, issue 45
Abstract
Controlling the carbon vacancy (V-C) in silicon carbide (SiC) is one of the major remaining bottleneck in manufacturing of high voltage SiC bipolar devices, because V-C provokes recombination levels in the bandgap, offensively reducing the charge carrier lifetime. In literature, prominent V-C evolutions have been measured by capacitance spectroscopy employing Schottky diodes, however the trade-offs occurring in the p(+)-n diodes received much less attention. In the present work, applying similar methodology, we showed that V-C is re-generated to its unacceptably high equilibrium level at similar to 2 x10(13) V-C cm(-3) by 1800 degrees C anneals required for the implanted acceptor activation in the p(+)-n components. Nevertheless, we have also demonstrated that the V-C eliminating by thermodynamic equilibrium anneals at 1500 degrees C employing carbon-cap can be readily integrated into the p(+)-n components fabrication resulting inDescription
Publisher Copyright: © 2021 IOP Publishing Ltd.
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Ayedh, H M, Kvamsdal, K E, Bobal, V, Hallén, A, Ling, F C C & Kuznetsov, A Y 2021, 'Carbon vacancy control in p + -n silicon carbide diodes for high voltage bipolar applications', Journal of Physics D: Applied Physics, vol. 54, no. 45, 455106. https://doi.org/10.1088/1361-6463/ac19df