Formation kinetics of copper-related light-induced degradation in crystalline silicon
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Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/jap
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School of Electrical Engineering |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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2014
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en
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5
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Journal of Applied Physics, Volume 116, Number 23
Abstract
Light-induced degradation (LID) is a deleterious effect in crystalline silicon, which is considered to originate from recombination-active boron-oxygen complexes and/or copper-related defects. Although LID in both cases appears as a fast initial decay followed by a second slower degradation, we show that the time constant of copper-related degradation increases with increasing boron concentration in contrast to boron-oxygen LID. Temperature-dependent analysis reveals that the defect formation is limited by copper diffusion. Finally, interface defect density measurements confirm that copper-related LID is dominated by recombination in the wafer bulk.Description
Keywords
copper, silicon, light-induced degradation, LID, solar cells, illumination, Cu-LID, BO-LID, wafer, surfaces, degradation
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Citation
Lindroos, Jeanette & Savin, Hele. 2014. Formation kinetics of copper-related light-induced degradation in crystalline silicon. Journal of Applied Physics. Volume 116, Number 23. 1089-7550 (electronic). DOI: 10.1063/1.4904197.