Formation kinetics of copper-related light-induced degradation in crystalline silicon

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Journal Title
Journal ISSN
Volume Title
School of Electrical Engineering | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2014
Major/Subject
Mcode
Degree programme
Language
en
Pages
5
Series
Journal of Applied Physics, Volume 116, Number 23
Abstract
Light-induced degradation (LID) is a deleterious effect in crystalline silicon, which is considered to originate from recombination-active boron-oxygen complexes and/or copper-related defects. Although LID in both cases appears as a fast initial decay followed by a second slower degradation, we show that the time constant of copper-related degradation increases with increasing boron concentration in contrast to boron-oxygen LID. Temperature-dependent analysis reveals that the defect formation is limited by copper diffusion. Finally, interface defect density measurements confirm that copper-related LID is dominated by recombination in the wafer bulk.
Description
Keywords
copper, silicon, light-induced degradation, LID, solar cells, illumination, Cu-LID, BO-LID, wafer, surfaces, degradation
Other note
Citation
Lindroos, Jeanette & Savin, Hele. 2014. Formation kinetics of copper-related light-induced degradation in crystalline silicon. Journal of Applied Physics. Volume 116, Number 23. 1089-7550 (electronic). DOI: 10.1063/1.4904197.