Mechanistic investigation of ZnO nanowire growth

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© 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/jap

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Volume Title

School of Electrical Engineering | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Date

2009

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Mcode

Degree programme

Language

en

Pages

183114/1-3

Series

Applied Physics Letters, Volume 95, Issue 18

Abstract

ZnO nanowire (NW) growth mechanism was investigated in a nonvapor and noncatalytic approach for the controlled NW synthesis in a second time scale. The experimental results showed what ZnO NW growth was determined by migration of zincinterstitials and vacancies in a ZnO layer, which should be also considered in other synthesis techniques and mechanisms. The mechanism of the ZnO NW growth was explained as due to the advantageous diffusion through grain boundaries in ZnO layer and crystal defects in NWs. Additionally, on the basis of photoluminescence measurements, a feasible application of as-produced wires for optoelectronic devices was demonstrated.

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Keywords

II‐VI semiconductors, zinc, interstitial defects, photoluminescence, vacancies, diffusion, grain boundaries, nanotechnology

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Citation

Rackauskas, Simas & Nasibulin, Albert G. & Jiang, Hua & Tian, Ying & Statkute, Gintare & Shandakov, Sergey D. & Lipsanen, Harri & Kauppinen, Esko I. 2009. Mechanistic investigation of ZnO nanowire growth. Applied Physics Letters. Volume 95, Issue 18. P. 183114/1-3. ISSN 0003-6951 (printed). DOI: 10.1063/1.3258074.