Noise properties of the Bloch oscillating transistor
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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3
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Applied Physics Letters, Volume 86, issue 17, pp. 1-3
Abstract
We have measured the current noise spectral density of the Bloch oscillating transistor as a function of current gain. We find, as expected from theory and simulations, that the equivalent input noise that shows up in the output is less than the shot noise of the normal-insulating-superconductor tunnel junction (base junction). At the optimal operating point we find a reduced input current noise of 1.0fA/Hz⎯⎯⎯⎯⎯√ and a corresponding noise temperature of 0.4 K. The differential current gain at the same point is as large as 30 and the power gain amounts to 35.Description
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Lindell, R & Hakonen, P 2005, 'Noise properties of the Bloch oscillating transistor', Applied Physics Letters, vol. 86, no. 17, 173507, pp. 1-3. https://doi.org/10.1063/1.1919392