Local semiconducting transition in armchair carbon nanotubes: The effect of periodic bi-site perturbation on electronic and transport properties of carbon nanotubes

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorHashemi, M. J.
dc.contributor.authorSääskilahti, K.
dc.contributor.authorPuska, Martti J.
dc.contributor.departmentTeknillisen fysiikan laitosfi
dc.contributor.departmentDepartment of Applied Physicsen
dc.contributor.schoolPerustieteiden korkeakoulufi
dc.contributor.schoolSchool of Scienceen
dc.date.accessioned2015-09-16T09:01:30Z
dc.date.available2015-09-16T09:01:30Z
dc.date.issued2011
dc.description.abstractIn carbon nanotubes, the most abundant defects, caused for example by irradiation or chemisorption treatments, are small perturbing clusters, i.e., bi-site defects, extending over both A and B sites. The relative positions of these perturbing clusters play a crucial role in determining the electronic properties of carbon nanotubes. Using band structure and electronic transport calculations, we find that in the case of armchair metallic nanotubes a band gap opens up when the clusters fulfill a certain periodicity condition. This phenomenon might be used in future nanoelectronic devices in which certain regions of single metallic nanotubes could be turned to semiconducting ones. Although in this work we study specifically the effect of hydrogen adatom clusters, the phenomenon is general for different types of defects. Moreover, we study the influence of the length and randomness of the defected region on the electron transport through it.en
dc.description.versionPeer revieweden
dc.format.extent115411/1-5
dc.format.mimetypeapplication/pdfen
dc.identifier.citationHashemi, M. J. & Sääskilahti, K. & Puska, Martti J. 2011. Local semiconducting transition in armchair carbon nanotubes: The effect of periodic bi-site perturbation on electronic and transport properties of carbon nanotubes. Physical Review B. Volume 83, Issue 11. 115411/1-5. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.83.115411.en
dc.identifier.doi10.1103/physrevb.83.115411
dc.identifier.issn1550-235X (electronic)
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/17672
dc.identifier.urnURN:NBN:fi:aalto-201509164276
dc.language.isoenen
dc.publisherAmerican Physical Society (APS)en
dc.relation.ispartofseriesPhysical Review Ben
dc.relation.ispartofseriesVolume 83, Issue 11
dc.rights© 2011 American Physical Society (APS). This is the accepted version of the following article: Hashemi, M. J. & Sääskilahti, K. & Puska, Martti J. 2011. Local semiconducting transition in armchair carbon nanotubes: The effect of periodic bi-site perturbation on electronic and transport properties of carbon nanotubes. Physical Review B. Volume 83, Issue 11. 115411/1-5. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.83.115411, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.83.115411en
dc.rights.holderAmerican Physical Society (APS)
dc.subject.keywordcarbon nanotubesen
dc.subject.keywordelectron transporten
dc.subject.otherPhysicsen
dc.titleLocal semiconducting transition in armchair carbon nanotubes: The effect of periodic bi-site perturbation on electronic and transport properties of carbon nanotubesen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.dcmitypetexten
dc.type.versionFinal published versionen
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