Local semiconducting transition in armchair carbon nanotubes: The effect of periodic bi-site perturbation on electronic and transport properties of carbon nanotubes

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Journal Title
Journal ISSN
Volume Title
School of Science | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2011
Major/Subject
Mcode
Degree programme
Language
en
Pages
115411/1-5
Series
Physical Review B, Volume 83, Issue 11
Abstract
In carbon nanotubes, the most abundant defects, caused for example by irradiation or chemisorption treatments, are small perturbing clusters, i.e., bi-site defects, extending over both A and B sites. The relative positions of these perturbing clusters play a crucial role in determining the electronic properties of carbon nanotubes. Using band structure and electronic transport calculations, we find that in the case of armchair metallic nanotubes a band gap opens up when the clusters fulfill a certain periodicity condition. This phenomenon might be used in future nanoelectronic devices in which certain regions of single metallic nanotubes could be turned to semiconducting ones. Although in this work we study specifically the effect of hydrogen adatom clusters, the phenomenon is general for different types of defects. Moreover, we study the influence of the length and randomness of the defected region on the electron transport through it.
Description
Keywords
carbon nanotubes, electron transport
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Citation
Hashemi, M. J. & Sääskilahti, K. & Puska, Martti J. 2011. Local semiconducting transition in armchair carbon nanotubes: The effect of periodic bi-site perturbation on electronic and transport properties of carbon nanotubes. Physical Review B. Volume 83, Issue 11. 115411/1-5. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.83.115411.