Enhanced performance in the deteriorated area of multicrystalline silicon wafers by internal gettering

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Authors

Date

2015

Department

Department of Micro and Nanosciences
Department of Electronics and Nanoengineering

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Mcode

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Language

en

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Series

Progress in Photovoltaics, Volume 23, issue 1, pp. 30-36

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Keywords

internal gettering, iron, multicrystalline silicon, Red Zone

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DOI

10.1002/pip.2391

Citation

Boulfrad, Y, Haarahiltunen, A, Savin, H, Ovrelid, E J & Arnberg, L 2015, 'Enhanced performance in the deteriorated area of multicrystalline silicon wafers by internal gettering', Progress in Photovoltaics, vol. 23, no. 1, pp. 30-36. https://doi.org/10.1002/pip.2391

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https://urn.fi/URN:NBN:fi:aalto-202510088079

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[article-cris] Sähkötekniikan korkeakoulu / ELEC