rf-electrometer using a carbon nanotube resonant tunneling transistor

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date

2010

Department

Department of Applied Physics

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Language

en

Pages

3

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Journal of Applied Physics, Volume 107, issue 8, pp. 1-3

Abstract

We have studied resonant tunneling transistors (RTT) made of single-walled carbon nanotube quantum dots in the Fabry–Pérot regime. We show sensitivity to input charge as high as 5×10−6 e/Hz1/2 with a carrier frequency of 719 MHz at 4.2 K. This result is comparable to the best values of charge sensitivity so far reported for radio frequency single electron transistors (rf-SET). Unlike SETs, whose operating temperature is limited as Coulomb blockade vanishes as 1/T, a RTT can operate at higher temperatures, since the dephasing length lϕ∝1/T2/3.

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Keywords

carbon nanotube, rf-electromete

Other note

DOI

10.1063/1.3387927

Citation

Lechner, L G, Wu, F, Danneau, R, Andresen, S E & Hakonen, P 2010, 'rf-electrometer using a carbon nanotube resonant tunneling transistor', Journal of Applied Physics, vol. 107, no. 8, 084316, pp. 1-3. https://doi.org/10.1063/1.3387927

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https://urn.fi/URN:NBN:fi:aalto-202510087846

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[article-cris] Perustieteiden korkeakoulu / SCI