Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
dc.contributor | Aalto-yliopisto | fi |
dc.contributor | Aalto University | en |
dc.contributor.author | Seppänen, Heli | en_US |
dc.contributor.author | Kim, Iurii | en_US |
dc.contributor.author | Etula, Jarkko | en_US |
dc.contributor.author | Ubyivovk, Evgeniy | en_US |
dc.contributor.author | Buravlev, Alexey | en_US |
dc.contributor.author | Lipsanen, Harri | en_US |
dc.contributor.department | Department of Electronics and Nanoengineering | en |
dc.contributor.department | Department of Chemistry and Materials Science | en |
dc.contributor.groupauthor | Harri Lipsanen Group | en |
dc.contributor.groupauthor | Markku Sopanen Group | en |
dc.contributor.groupauthor | Physical Characteristics of Surfaces and Interfaces | en |
dc.contributor.organization | St. Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO) | en_US |
dc.date.accessioned | 2019-02-25T08:49:47Z | |
dc.date.available | 2019-02-25T08:49:47Z | |
dc.date.issued | 2019-02-01 | en_US |
dc.description.abstract | Aluminum nitride (AlN) films have been grown using novel technological approaches based on plasma-enhanced atomic layer deposition (PEALD) and in situ atomic layer annealing (ALA). The growth of AlN layers was carried out on Si<100> and Si<111> substrates at low growth temperature. The investigation of crystalline quality of samples demonstrated that PEALD grown layers were polycrystalline, but ALA treatment improved their crystallinity. A thick polycrystalline AlN layer was successfully regrown by metal-organic chemical vapor deposition (MOCVD) on an AlN PEALD template. It opens up the new possibilities for the formation of nucleation layers with improved quality for subsequent growth of semiconductor nitride compounds. | en |
dc.description.version | Peer reviewed | en |
dc.format.extent | 8 | |
dc.format.mimetype | application/pdf | en_US |
dc.identifier.citation | Seppänen, H, Kim, I, Etula, J, Ubyivovk, E, Buravlev, A & Lipsanen, H 2019, ' Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition ', Materials, vol. 12, no. 3, 406 . https://doi.org/10.3390/ma12030406 | en |
dc.identifier.doi | 10.3390/ma12030406 | en_US |
dc.identifier.issn | 1996-1944 | |
dc.identifier.other | PURE UUID: 93cd7b23-245e-4d74-809f-1507b083ca28 | en_US |
dc.identifier.other | PURE ITEMURL: https://research.aalto.fi/en/publications/93cd7b23-245e-4d74-809f-1507b083ca28 | en_US |
dc.identifier.other | PURE FILEURL: https://research.aalto.fi/files/31555832/ELEC_Seppanen_Aluminium_Nitride_Transition_Materials.pdf | en_US |
dc.identifier.uri | https://aaltodoc.aalto.fi/handle/123456789/36822 | |
dc.identifier.urn | URN:NBN:fi:aalto-201902251979 | |
dc.language.iso | en | en |
dc.publisher | MDPI AG | |
dc.relation.ispartofseries | Materials | en |
dc.relation.ispartofseries | Volume 12, issue 3 | en |
dc.rights | openAccess | en |
dc.subject.keyword | AIN | en_US |
dc.subject.keyword | ALA | en_US |
dc.subject.keyword | ALD | en_US |
dc.subject.keyword | buffer layers | en_US |
dc.subject.keyword | transition layer | en_US |
dc.subject.keyword | MOCVD | en_US |
dc.subject.keyword | regrowth | en_US |
dc.title | Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition | en |
dc.type | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä | fi |
dc.type.version | publishedVersion |