Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorSeppänen, Helien_US
dc.contributor.authorKim, Iuriien_US
dc.contributor.authorEtula, Jarkkoen_US
dc.contributor.authorUbyivovk, Evgeniyen_US
dc.contributor.authorBuravlev, Alexeyen_US
dc.contributor.authorLipsanen, Harrien_US
dc.contributor.departmentDepartment of Electronics and Nanoengineeringen
dc.contributor.departmentDepartment of Chemistry and Materials Scienceen
dc.contributor.groupauthorHarri Lipsanen Groupen
dc.contributor.groupauthorMarkku Sopanen Groupen
dc.contributor.groupauthorPhysical Characteristics of Surfaces and Interfacesen
dc.contributor.organizationSt. Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO)en_US
dc.date.accessioned2019-02-25T08:49:47Z
dc.date.available2019-02-25T08:49:47Z
dc.date.issued2019-02-01en_US
dc.description.abstractAluminum nitride (AlN) films have been grown using novel technological approaches based on plasma-enhanced atomic layer deposition (PEALD) and in situ atomic layer annealing (ALA). The growth of AlN layers was carried out on Si<100> and Si<111> substrates at low growth temperature. The investigation of crystalline quality of samples demonstrated that PEALD grown layers were polycrystalline, but ALA treatment improved their crystallinity. A thick polycrystalline AlN layer was successfully regrown by metal-organic chemical vapor deposition (MOCVD) on an AlN PEALD template. It opens up the new possibilities for the formation of nucleation layers with improved quality for subsequent growth of semiconductor nitride compounds.en
dc.description.versionPeer revieweden
dc.format.extent8
dc.format.mimetypeapplication/pdfen_US
dc.identifier.citationSeppänen, H, Kim, I, Etula, J, Ubyivovk, E, Buravlev, A & Lipsanen, H 2019, ' Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition ', Materials, vol. 12, no. 3, 406 . https://doi.org/10.3390/ma12030406en
dc.identifier.doi10.3390/ma12030406en_US
dc.identifier.issn1996-1944
dc.identifier.otherPURE UUID: 93cd7b23-245e-4d74-809f-1507b083ca28en_US
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/93cd7b23-245e-4d74-809f-1507b083ca28en_US
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/31555832/ELEC_Seppanen_Aluminium_Nitride_Transition_Materials.pdfen_US
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/36822
dc.identifier.urnURN:NBN:fi:aalto-201902251979
dc.language.isoenen
dc.publisherMDPI AG
dc.relation.ispartofseriesMaterialsen
dc.relation.ispartofseriesVolume 12, issue 3en
dc.rightsopenAccessen
dc.subject.keywordAINen_US
dc.subject.keywordALAen_US
dc.subject.keywordALDen_US
dc.subject.keywordbuffer layersen_US
dc.subject.keywordtransition layeren_US
dc.subject.keywordMOCVDen_US
dc.subject.keywordregrowthen_US
dc.titleAluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Depositionen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.versionpublishedVersion
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