Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition

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Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2019-02-01
Major/Subject
Mcode
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Language
en
Pages
8
Series
Materials, Volume 12, issue 3
Abstract
Aluminum nitride (AlN) films have been grown using novel technological approaches based on plasma-enhanced atomic layer deposition (PEALD) and in situ atomic layer annealing (ALA). The growth of AlN layers was carried out on Si<100> and Si<111> substrates at low growth temperature. The investigation of crystalline quality of samples demonstrated that PEALD grown layers were polycrystalline, but ALA treatment improved their crystallinity. A thick polycrystalline AlN layer was successfully regrown by metal-organic chemical vapor deposition (MOCVD) on an AlN PEALD template. It opens up the new possibilities for the formation of nucleation layers with improved quality for subsequent growth of semiconductor nitride compounds.
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Keywords
AIN, ALA, ALD, buffer layers, transition layer, MOCVD, regrowth
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Citation
Seppänen, H, Kim, I, Etula, J, Ubyivovk, E, Buravlev, A & Lipsanen, H 2019, ' Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition ', Materials, vol. 12, no. 3, 406 . https://doi.org/10.3390/ma12030406