Zinc vacancy and oxygen interstitial in ZnO revealed by sequential annealing and electron irradiation
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2012-09
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Language
en
Pages
5
1-5
1-5
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PHYSICAL REVIEW B, Volume 86, issue 12
Abstract
By combining results from positron annihilation and photoluminescence spectroscopy with data from Hall effect measurements, the characteristic deep level emission centered at ∼1.75 eV and exhibiting an activation energy of thermal quenching of 11.5 meV is associated with the zinc vacancy. Further, a strong indication that oxygen interstitials act as a dominating acceptor is derived from the analysis of charge carrier losses induced by electron irradiation with variable energy below and above the threshold for Zn-atom displacement. We also demonstrate that the commonly observed green emission is related to an extrinsic acceptorlike impurity, which may be readily passivated by oxygen vacancies.Description
Keywords
photoluminescence, positron, vacancies, ZnO
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Citation
Knutsen , K E , Galeckas , A , Zubiaga , A , Tuomisto , F , Farlow , G C , Svensson , B G & Kuznetsov , A Y 2012 , ' Zinc vacancy and oxygen interstitial in ZnO revealed by sequential annealing and electron irradiation ' , Physical Review B , vol. 86 , no. 12 , 121203 , pp. 1-5 . https://doi.org/10.1103/PhysRevB.86.121203