Characterization of homoepitaxial gallium nitride grown by hydride vapor phase epitaxy
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Helsinki University of Technology |
Diplomityö
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Date
2002
Major/Subject
Fysiikka
Mcode
Tfy-3
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Language
en
Pages
95
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Description
Supervisor
Saarinen, KimmoThesis advisor
Saarinen, KimmoKeywords
gallium nitride, galliumnitridi, HVPE, HVPE, optical spectroscopy, optinen spektroskopia, positron annihilation, positroniannihilaatio