Modeling of heterogeneous precipitation of iron in silicon
dc.contributor | Aalto-yliopisto | fi |
dc.contributor | Aalto University | en |
dc.contributor.author | Haarahiltunen, Antti | |
dc.contributor.author | Väinölä, Hele | |
dc.contributor.author | Anttila, O. | |
dc.contributor.author | Saarnilehto, Eero | |
dc.contributor.author | Yli-Koski, Marko | |
dc.contributor.author | Storgårds, Jan | |
dc.contributor.author | Sinkkonen, Juha | |
dc.contributor.department | Department of Micro and Nanosciences | en |
dc.contributor.department | Mikro- ja nanotekniikan laitos | fi |
dc.contributor.school | Sähkötekniikan korkeakoulu | fi |
dc.contributor.school | School of Electrical Engineering | en |
dc.date.accessioned | 2015-04-09T09:00:49Z | |
dc.date.available | 2015-04-09T09:00:49Z | |
dc.date.issued | 2005 | |
dc.description.abstract | A model is presented for the growth and dissolution of iron precipitates at oxygen-related defects in silicon during thermal processing. The heterogeneous nucleation of iron is taken into account by special growth and dissolution rates, which are inserted into a set of modified chemical rate equations. This approach allows us to calculate the size distribution of iron precipitates and the residual iron concentration. By comparing the simulated results with experimental ones, it is proven that this model can be used to estimate the internal gettering efficiency of iron under a variety of processing conditions. | en |
dc.description.version | Peer reviewed | en |
dc.format.extent | 3 | |
dc.format.mimetype | application/pdf | en |
dc.identifier.citation | Haarahiltunen, Antti & Väinölä, Hele & Anttila, O. & Saarnilehto, E. & Yli-Koski, Marko & Storgårds, Jan & Sinkkonen, Juha. 2005. Modeling of heterogeneous precipitation of iron in silicon. Applied Physics Letters. Vol. 87, Issue 15. 0003-6951 (printed). DOI: 10.1063/1.2099531. | en |
dc.identifier.doi | 10.1063/1.2099531 | |
dc.identifier.issn | 0003-6951 (printed) | |
dc.identifier.uri | https://aaltodoc.aalto.fi/handle/123456789/15592 | |
dc.identifier.urn | URN:NBN:fi:aalto-201504082165 | |
dc.language.iso | en | en |
dc.publisher | AIP Publishing | en |
dc.relation.ispartofseries | Applied Physics Letters | en |
dc.relation.ispartofseries | Vol. 87, Issue 15 | |
dc.rights | Copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/apl | en |
dc.rights.holder | American Institute of Physics | |
dc.subject.keyword | iron precipitates | en |
dc.subject.keyword | iron concentration | en |
dc.subject.keyword | internal gettering | en |
dc.subject.keyword | gettering efficiency | en |
dc.subject.keyword | modeling | en |
dc.subject.other | Energy | en |
dc.subject.other | Physics | en |
dc.subject.other | Electrical engineering | en |
dc.title | Modeling of heterogeneous precipitation of iron in silicon | en |
dc.type | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä | fi |
dc.type.dcmitype | text | en |
dc.type.version | Final published version | en |
Files
Original bundle
1 - 1 of 1
No Thumbnail Available
- Name:
- A1_haarahiltunen_antti_2005.pdf
- Size:
- 568.66 KB
- Format:
- Adobe Portable Document Format