TCTA:Ir(ppy)3 Green Emissive Blends in Organic Light-Emitting Transistors (OLETs)

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2022-12-06
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Language
en
Pages
10
43719-43728
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ACS Omega, Volume 7, issue 48
Abstract
Organic light-emitting transistors are photonic devices combining the function of an electrical switch with the capability of generating light under appropriate bias conditions. Achieving high-performance light-emitting transistors requires high-mobility organic semiconductors, optimized device structures, and highly efficient emissive layers. In this work, we studied the optoelectronic response of green blends (TCTA:Ir(ppy)3) with varying doping concentrations in the limit of field-effect within a transistor device configuration. Increasing the dye concentration within the blend leads to a quenching of the photoluminescence signal; however, when implemented in a multilayer stack in a transistor, we observed an approximately 5-fold improvement in the light output for a 10% Ir(ppy)3 doping blend. We analyzed our results in terms of balanced charge transport in the emissive layer, which, in the limit of field-effect (horizontal component), leads to an improved exciton formation and decay process. While the performances of our devices are yet to achieve the state-of-the-art diode counterpart, this work demonstrates that engineering the emissive layer is a promising approach to enhance the light emission in field-effect devices. This opens the way for a broader exploitation of organic light-emitting transistors as alternative photonic devices in several fields, ranging from display technology to flexible and wearable electronics.
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Soldano , C , Gallegos Rosas , K & Laouadi , O 2022 , ' TCTA:Ir(ppy)3 Green Emissive Blends in Organic Light-Emitting Transistors (OLETs) ' , ACS Omega , vol. 7 , no. 48 , pp. 43719-43728 . https://doi.org/10.1021/acsomega.2c04718