Effective Passivation of Black Silicon Surfaces by Atomic Layer Deposition
dc.contributor | Aalto-yliopisto | fi |
dc.contributor | Aalto University | en |
dc.contributor.author | Repo, Päivikki | |
dc.contributor.author | Haarahiltunen, Antti | |
dc.contributor.author | Sainiemi, Lauri | |
dc.contributor.author | Yli-Koski, Marko | |
dc.contributor.author | Talvitie, Heli | |
dc.contributor.author | Schubert, Martin C. | |
dc.contributor.author | Savin, Hele | |
dc.contributor.department | Mikro- ja nanotekniikan laitos | fi |
dc.contributor.department | Department of Micro and Nanosciences | en |
dc.contributor.school | Sähkötekniikan korkeakoulu | fi |
dc.contributor.school | School of Electrical Engineering | en |
dc.date.accessioned | 2015-06-02T09:00:56Z | |
dc.date.available | 2015-06-02T09:00:56Z | |
dc.date.issued | 2013 | |
dc.description.abstract | The poor charge-carrier transport properties attributed to nanostructured surfaces have been so far more detrimental for final device operation than the gain obtained from the reduced reflectance. Here, we demonstrate results that simultaneously show a huge improvement in the light absorption and in the surface passivation by applying atomic layer coating on highly absorbing silicon nanostructures. The results advance the development of photovoltaic applications, including high-efficiency solar cells or any devices, that require high-sensitivity light response. | en |
dc.description.version | Peer reviewed | en |
dc.format.extent | 90-94 | |
dc.format.mimetype | application/pdf | en |
dc.identifier.citation | Repo, Päivikki & Haarahiltunen, Antti & Sainiemi, Lauri & Yli-Koski, Marko & Talvitie, Heli & Schubert, Martin C. & Savin, Hele. 2013. Effective Passivation of Black Silicon Surfaces by Atomic Layer Deposition. IEEE Journal of Photovoltaics. Volume 3, Issue 1. 90-94. ISSN 2156-3381 (printed). DOI: 10.1109/jphotov.2012.2210031. | en |
dc.identifier.doi | 10.1109/jphotov.2012.2210031 | |
dc.identifier.issn | 2156-3381 (printed) | |
dc.identifier.uri | https://aaltodoc.aalto.fi/handle/123456789/16403 | |
dc.identifier.urn | URN:NBN:fi:aalto-201506013053 | |
dc.language.iso | en | en |
dc.publisher | Institute of Electrical & Electronics Engineers (IEEE) | en |
dc.relation.ispartofseries | IEEE Journal of Photovoltaics | en |
dc.relation.ispartofseries | Volume 3, Issue 1 | |
dc.rights | © 2013 Institute of Electrical & Electronics Engineers (IEEE). Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other work. http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6264075&tag=1 | en |
dc.rights.holder | Institute of Electrical & Electronics Engineers (IEEE) | |
dc.subject.keyword | aluminum oxide | en |
dc.subject.keyword | atomic layer deposition | en |
dc.subject.keyword | black silicon | en |
dc.subject.keyword | nanostructures | en |
dc.subject.other | Electrical engineering | en |
dc.subject.other | Physics | en |
dc.title | Effective Passivation of Black Silicon Surfaces by Atomic Layer Deposition | en |
dc.type | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä | fi |
dc.type.dcmitype | text | en |
dc.type.version | Post print | en |
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