Effective Passivation of Black Silicon Surfaces by Atomic Layer Deposition

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorRepo, Päivikki
dc.contributor.authorHaarahiltunen, Antti
dc.contributor.authorSainiemi, Lauri
dc.contributor.authorYli-Koski, Marko
dc.contributor.authorTalvitie, Heli
dc.contributor.authorSchubert, Martin C.
dc.contributor.authorSavin, Hele
dc.contributor.departmentMikro- ja nanotekniikan laitosfi
dc.contributor.departmentDepartment of Micro and Nanosciencesen
dc.contributor.schoolSähkötekniikan korkeakoulufi
dc.contributor.schoolSchool of Electrical Engineeringen
dc.date.accessioned2015-06-02T09:00:56Z
dc.date.available2015-06-02T09:00:56Z
dc.date.issued2013
dc.description.abstractThe poor charge-carrier transport properties attributed to nanostructured surfaces have been so far more detrimental for final device operation than the gain obtained from the reduced reflectance. Here, we demonstrate results that simultaneously show a huge improvement in the light absorption and in the surface passivation by applying atomic layer coating on highly absorbing silicon nanostructures. The results advance the development of photovoltaic applications, including high-efficiency solar cells or any devices, that require high-sensitivity light response.en
dc.description.versionPeer revieweden
dc.format.extent90-94
dc.format.mimetypeapplication/pdfen
dc.identifier.citationRepo, Päivikki & Haarahiltunen, Antti & Sainiemi, Lauri & Yli-Koski, Marko & Talvitie, Heli & Schubert, Martin C. & Savin, Hele. 2013. Effective Passivation of Black Silicon Surfaces by Atomic Layer Deposition. IEEE Journal of Photovoltaics. Volume 3, Issue 1. 90-94. ISSN 2156-3381 (printed). DOI: 10.1109/jphotov.2012.2210031.en
dc.identifier.doi10.1109/jphotov.2012.2210031
dc.identifier.issn2156-3381 (printed)
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/16403
dc.identifier.urnURN:NBN:fi:aalto-201506013053
dc.language.isoenen
dc.publisherInstitute of Electrical & Electronics Engineers (IEEE)en
dc.relation.ispartofseriesIEEE Journal of Photovoltaicsen
dc.relation.ispartofseriesVolume 3, Issue 1
dc.rights© 2013 Institute of Electrical & Electronics Engineers (IEEE). Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other work. http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6264075&tag=1en
dc.rights.holderInstitute of Electrical & Electronics Engineers (IEEE)
dc.subject.keywordaluminum oxideen
dc.subject.keywordatomic layer depositionen
dc.subject.keywordblack siliconen
dc.subject.keywordnanostructuresen
dc.subject.otherElectrical engineeringen
dc.subject.otherPhysicsen
dc.titleEffective Passivation of Black Silicon Surfaces by Atomic Layer Depositionen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.dcmitypetexten
dc.type.versionPost printen
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