Effective Passivation of Black Silicon Surfaces by Atomic Layer Deposition

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Journal Title
Journal ISSN
Volume Title
School of Electrical Engineering | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2013
Major/Subject
Mcode
Degree programme
Language
en
Pages
90-94
Series
IEEE Journal of Photovoltaics, Volume 3, Issue 1
Abstract
The poor charge-carrier transport properties attributed to nanostructured surfaces have been so far more detrimental for final device operation than the gain obtained from the reduced reflectance. Here, we demonstrate results that simultaneously show a huge improvement in the light absorption and in the surface passivation by applying atomic layer coating on highly absorbing silicon nanostructures. The results advance the development of photovoltaic applications, including high-efficiency solar cells or any devices, that require high-sensitivity light response.
Description
Keywords
aluminum oxide, atomic layer deposition, black silicon, nanostructures
Other note
Citation
Repo, Päivikki & Haarahiltunen, Antti & Sainiemi, Lauri & Yli-Koski, Marko & Talvitie, Heli & Schubert, Martin C. & Savin, Hele. 2013. Effective Passivation of Black Silicon Surfaces by Atomic Layer Deposition. IEEE Journal of Photovoltaics. Volume 3, Issue 1. 90-94. ISSN 2156-3381 (printed). DOI: 10.1109/jphotov.2012.2210031.