Vanishing quasiparticle density in a hybrid Al/Cu/Al single-electron transistor

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Journal Title
Journal ISSN
Volume Title
School of Science | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2012
Major/Subject
Mcode
Degree programme
Language
en
Pages
012504/1-4
Series
Physical Review B, Volume 85, Issue 1
Abstract
The achievable fidelity of many nanoelectronic devices based on superconducting aluminum is limited by either the density of residual nonequilibrium quasiparticles nqp or the density of quasiparticle states in the gap, characterized by Dynes parameter γ. We infer upper bounds nqp<0.033μm−3 and γ<1.6×10−7 from transport measurements performed on Al/Cu/Al single-electron transistors, improving previous results by an order of magnitude. Owing to efficient microwave shielding and quasiparticle relaxation, a typical number of quasiparticles in the superconducting leads is zero.
Description
Keywords
nanoelectronic devices, superconducting aluminum, quasiparticle density, single-electron transistors
Other note
Citation
Saira, O.-P. & Kemppinen, A. & Maisi, V. F. & Pekola, Jukka. 2012. Vanishing quasiparticle density in a hybrid Al/Cu/Al single-electron transistor. Physical Review B. Volume 85, Issue 1. 012504/1-4. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.85.012504.