Individual SWCNT Transistor with Photosensitive Planar Junction Induced by Two-Photon Oxidation
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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11
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Advanced Electronic Materials, Volume 7, issue 3
Abstract
The fabrication of planar junctions in carbon nanomaterials is a promising way to increase the optical sensitivity of optoelectronic nanometer-scale devices in photonic connections, sensors, and photovoltaics. Utilizing a unique lithography approach based on direct femtosecond laser processing, a fast and easy technique for modification of single-walled carbon nanotube (SWCNT) optoelectronic properties through localized two-photon oxidation is developed. It results in a novel approach of quasimetallic to semiconducting nanotube conversion so that metal/semiconductor planar junction is formed via local laser patterning. The fabricated planar junction in the field-effect transistors based on individual SWCNT drastically increases the photoresponse of such devices. The broadband photoresponsivity of the two-photon oxidized structures reaches the value of 2 × 107 A W−1 per single SWCNT at 1 V bias voltage. The SWCNT-based transistors with induced metal/semiconductor planar junction can be applied to detect extremely small light intensities with high spatial resolution in photovoltaics, integrated circuits, and telecommunication applications.Description
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Emelianov, A V, Nekrasov, N P, Moskotin, M V, Fedorov, G E, Otero, N, Romero, P M, Nevolin, V K, Afinogenov, B I, Nasibulin, A G & Bobrinetskiy, I I 2021, 'Individual SWCNT Transistor with Photosensitive Planar Junction Induced by Two-Photon Oxidation', Advanced Electronic Materials, vol. 7, no. 3, 2000872. https://doi.org/10.1002/aelm.202000872