SnO deposition via water based ALD employing tin(ii) formamidinate: precursor characterization and process development
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2022-10-21
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en
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14970-14979
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Dalton Transactions, Volume 51, issue 39
Abstract
Tin monoxide (SnO) is a promising oxide semiconductor which is appealing for a wide range of applications from channel materials in p-type field effect transistors (FET) to electrode materials searched for next-generation batteries. For the controlled growth of SnO films at low temperatures, atomic layer deposition (ALD) is employed in this study, where the choice of the precursor plays a significant role. A comparative thermal evaluation of four different amidinate-based tin(ii) precursors and the influence of the ligand sphere on their physicochemical properties revealed that bis(N,N′-diisopropylformamidinato tin(ii) (1) possesses the required volatility, good thermal stability and sufficient reactivity towards water, to be implemented as the ALD precursor. The water-assisted ALD process resulted in crystalline SnO films on Si substrates with a growth per cycle (GPC) of 0.82 Å at temperatures as low as 140 °C. By employing complementary analytical tools, namely, X-ray diffraction (XRD), atomic force microscopy (AFM), X-ray reflectivity (XRR), Rutherford backscattering spectrometry/nuclear reaction analysis (RBS/NRA) and X-ray photoelectron spectroscopy (XPS), the formation of tin monoxide was confirmed. Finally, the optical properties of the as-deposited films were analyzed via UV-Vis spectroscopy, exhibiting a band gap of 2.74 eV, which further confirms the formation of the targeted SnO phase.Description
| openaire: EC/H2020/765378/EU//HYCOAT Funding Information: The authors at the RUB thank the BMBF project ForMikro-FlexTMDSense (16ES1096K) and DFG-SPP 1796; FFLexCom; DE-790-17-1 for funding. Funding from the European Union's Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie grant agreement (No. 765378) is acknowledged. DZ thanks the Fund of Chemical Industries for supporting his PhD project (Kekulé fellowship). The authors acknowledge Florian Preischel for performing AFM measurements. Publisher Copyright: © 2022 The Royal Society of Chemistry.
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Huster, N, Ghiyasi, R, Zanders, D, Rogalla, D, Karppinen, M & Devi, A 2022, ' SnO deposition via water based ALD employing tin(ii) formamidinate: precursor characterization and process development ', Dalton Transactions, vol. 51, no. 39, pp. 14970-14979 . https://doi.org/10.1039/d2dt02562k