Tantalum based thin film resistors and diffusion barriers
dc.contributor | Aalto-yliopisto | fi |
dc.contributor | Aalto University | en |
dc.contributor.advisor | Molarius, Jyrki | |
dc.contributor.author | Riekkinen, Tommi | |
dc.contributor.department | Materiaali- ja kalliotekniikan osasto | fi |
dc.contributor.school | Teknillinen korkeakoulu | fi |
dc.contributor.school | Helsinki University of Technology | en |
dc.contributor.supervisor | Kivilahti, Jorma | |
dc.date.accessioned | 2020-12-04T14:18:59Z | |
dc.date.available | 2020-12-04T14:18:59Z | |
dc.date.issued | 2001 | |
dc.format.extent | 73 | |
dc.identifier.uri | https://aaltodoc.aalto.fi/handle/123456789/89461 | |
dc.identifier.urn | URN:NBN:fi:aalto-2020120448296 | |
dc.language.iso | fi | en |
dc.programme.major | Elektroniikan valmistustekniikka | fi |
dc.programme.mcode | S-113 | fi |
dc.rights.accesslevel | closedAccess | |
dc.subject.keyword | thin film resistor | en |
dc.subject.keyword | ohutkalvovastus | fi |
dc.subject.keyword | diffusion barrier | en |
dc.subject.keyword | diffuusiovalli | fi |
dc.subject.keyword | beta-Ta | en |
dc.subject.keyword | beta-Ta | fi |
dc.subject.keyword | Ta2N | en |
dc.subject.keyword | Ta2 | fi |
dc.subject.keyword | TaN | en |
dc.subject.keyword | TaN | fi |
dc.subject.keyword | TaC | en |
dc.subject.keyword | TaC | fi |
dc.subject.keyword | sputtering | en |
dc.subject.keyword | sputterointi | fi |
dc.subject.keyword | temperature coefficient of resistance (TCR) | en |
dc.subject.keyword | vastuksen lämpötilakerroin (TCR) | fi |
dc.title | Tantalum based thin film resistors and diffusion barriers | en |
dc.title | Tantaaliyhdisteisiin perustuvat ohutkalvovastukset ja diffuusiovallit | fi |
dc.type.okm | G2 Pro gradu, diplomityö | |
dc.type.ontasot | Master's thesis | en |
dc.type.ontasot | Pro gradu -tutkielma | fi |
dc.type.publication | masterThesis | |
local.aalto.digiauth | ask | |
local.aalto.digifolder | Aalto_52909 | |
local.aalto.idinssi | 18871 | |
local.aalto.openaccess | no |