Electroluminescent cooling using double diode structures
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Date
2018-12-07
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en
Pages
2
125-126
125-126
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18th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2018, Volume 2018-November
Abstract
The progress in optical cooling in recent years is resulting in a renewed interest in electroluminescent (EL) cooling using conventional III-V semiconductor light emitting diodes (LEDs). In this work, we address the limiting factors for observing EL cooling in III-As intracavity double diode structures (DDSs), at high powers at and close to 300K, by using a combination of experimental characterization and physical device models. The studied DDSs incorporate optically-coupled III-As LED and p-n homojunction photodiode (PD) structures, integrated in a single device and providing a favourable environment for EL cooling observation. We employ a modelling framework coupling the drift-diffusion charge transport model to a photon transport model calibrated using measurements on real devices at different temperatures. Results suggest that the bulk properties of the III-V materials are already sufficient for EL cooling.Description
| openaire: EC/H2020/638173/EU//iTPX
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Sadi, T, Radevici, I, Kivisaari, P, Casado, A & Oksanen, J 2018, Electroluminescent cooling using double diode structures . in J Piprek & A B Djurisic (eds), 18th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2018 . vol. 2018-November, 8570294, IEEE, pp. 125-126, International Conference on Numerical Simulation of Optoelectronic Devices, Hong Kong, China, 05/11/2018 . https://doi.org/10.1109/NUSOD.2018.8570294