Doping and carrier transport in Ga1−3xIn3xNxAs1−x alloys

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2001-08-29
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Mcode
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Language
en
Pages
3
1-3
Series
PHYSICAL REVIEW B, Volume 64, issue 11
Abstract
Si- and Be-doped Ga1−3xIn3xNxAs1−x(0<~x<~3%) layers are grown on GaAs substrates by gas-source molecular beam epitaxy with a nitrogen radical beam source. The carrier concentration and mobility are observed to decrease substantially with increasing nitrogen content in both p- and n-type GaInNAs films. After rapid thermal annealing at 750 °C, the Be dopants are almost fully activated in p-type material; yet only a small fraction of the Si dopants are activated in n-type GaInNAs films. At low temperature a broad photoluminescence band centered at 1.041 eV (about 120 meV below the band gap) is observed in n-type GaInNAs, which suggests the possible compensating centers present in Si-doped GaInNAs.
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Keywords
GaInNAs alloys, transport properties
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Citation
Li , W , Pessa , M , Toivonen , J & Lipsanen , H 2001 , ' Doping and carrier transport in Ga1−3xIn3xNxAs1−x alloys ' , Physical Review B , vol. 64 , no. 11 , 113308 , pp. 1-3 . https://doi.org/10.1103/PhysRevB.64.113308