Magnetically active vacancy related defects in irradiated GaN layers

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dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorKilanski, L.
dc.contributor.authorTuomisto, F.
dc.contributor.authorSzymczak, R.
dc.contributor.authorKruszka, R.
dc.contributor.departmentDepartment of Applied Physics
dc.date.accessioned2017-06-20T11:14:34Z
dc.date.available2017-06-20T11:14:34Z
dc.date.issued2012
dc.description.abstractWe present the studies of magnetic properties of 2 MeV 4He+-irradiated GaN grown by metal-organic chemical-vapor deposition. Particle irradiation allowed controllable introduction of Ga-vacancy in the samples. The magnetic moments with concentrations changing between 4.3 and 8.3×1017cm−3 showing superparamagnetic blocking at room temperature are observed. The appearance of clear hysteresis curve at T=5K with coercive field of about HC≈270 Oe suggests that the formation of more complex Ga vacancy related defects is promoted with increasing Ga vacancy content. The small concentration of the observed magnetically active defects with respect to the total Ga-vacancy concentration suggests that the presence of the oxygen/hydrogen-related vacancy complexes is the source of the observed magnetic moments.en
dc.description.versionPeer revieweden
dc.format.extent3
dc.format.extent1-3
dc.format.mimetypeapplication/pdf
dc.identifier.citationKilanski , L , Tuomisto , F , Szymczak , R & Kruszka , R 2012 , ' Magnetically active vacancy related defects in irradiated GaN layers ' , Applied Physics Letters , vol. 101 , no. 7 , 072102 , pp. 1-3 . https://doi.org/10.1063/1.4745776en
dc.identifier.doi10.1063/1.4745776
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.otherPURE UUID: 17599f42-0626-4a82-aef5-d49273627bba
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/17599f42-0626-4a82-aef5-d49273627bba
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/13453083/1_2E4745776.pdf
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/26936
dc.identifier.urnURN:NBN:fi:aalto-201706205660
dc.language.isoenen
dc.relation.ispartofseriesAPPLIED PHYSICS LETTERSen
dc.relation.ispartofseriesVolume 101, issue 7en
dc.rightsopenAccessen
dc.subject.keywordGa vacancy
dc.subject.keywordGaN
dc.subject.keywordmagnetic ordering
dc.titleMagnetically active vacancy related defects in irradiated GaN layersen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.versionpublishedVersion

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