Evaluation of the concentration of point defects in GaN
Loading...
Access rights
openAccess
URL
Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
This publication is imported from Aalto University research portal.
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
Other link related to publication (opens in new window)
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
Other link related to publication (opens in new window)
Date
2017-12-01
Department
Major/Subject
Mcode
Degree programme
Language
en
Pages
1-11
Series
Scientific Reports, Volume 7, issue 1
Abstract
Photoluminescence (PL) was used to estimate the concentration of point defects in GaN. The results are compared with data from positron annihilation spectroscopy (PAS), secondary ion mass spectrometry (SIMS), and deep level transient spectroscopy (DLTS). Defect-related PL intensity in undoped GaN grown by hydride vapor phase epitaxy increases linearly with the concentration of related defects only up to 1016 cm-3. At higher concentrations, the PL intensity associated with individual defects tends to saturate, and accordingly, does not directly correlate with the concentration of defects. For this reason, SIMS analysis, with relatively high detection limits, may not be helpful for classifying unidentified point defects in GaN. Additionally, we highlight challenges in correlating defects identified by PL with those by PAS and DLTS methods.Description
Keywords
Other note
Citation
Reshchikov, M A, Usikov, A, Helava, H, Makarov, Y N, Prozheeva, V, Makkonen, I, Tuomisto, F, Leach, J H & Udwary, K 2017, ' Evaluation of the concentration of point defects in GaN ', Scientific Reports, vol. 7, no. 1, 9297, pp. 1-11 . https://doi.org/10.1038/s41598-017-08570-1