Rapid thermal chemical vapor deposition of graphene on copper

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dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.advisorRiikonen, Juha 
dc.contributor.authorLi, Changfeng
dc.contributor.departmentMikro- ja nanotekniikan laitosfi
dc.contributor.schoolSähkötekniikan korkeakoulufi
dc.contributor.schoolSchool of Electrical Engineeringen
dc.contributor.supervisorLipsanen, Harri 
dc.date.accessioned2020-12-28T10:33:44Z
dc.date.available2020-12-28T10:33:44Z
dc.date.issued2012 
dc.description.abstractThe goal of this work is to find suitable parameters for graphene growth on copper foil using rapid thermal process (RTP) chemical vapour deposition (CVD). The growth temperature and time were optimized as the gas flow was fixed (12/3 sccm methane/hydrogen). Various samples were fabricated to find an optimal growth temperature based on a certain growth time. Then the effect of growth time is considered. Graphene films on copper were initially characterized by Raman spectroscopy. Suitable films were transferred to silicon dioxide coated silicon chips for scanning Raman spectroscopy and scanning electron microscopy. Scanned Raman images are analysed in detail using statistical histograms to assess the graphene characteristics. Also full width at half maximum (FWHM) of samples were tested. The effect of the surface morphology of the copper foil and influence of the RTP process were also characterized to improve the quality of graphene. The optimized growth parameters were found to be 935°C and 60 s. The results indicate that surface pre-treatment of copper foil increases the quality of graphene.en
dc.format.extent[6] + 59 
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/100406
dc.identifier.urnURN:NBN:fi:aalto-2020122859237
dc.language.isoenen
dc.programme.majorOptoelektroniikkafi
dc.programme.mcodeS-104fi
dc.rights.accesslevelclosedAccess
dc.subject.keywordchemical vapor depositionen
dc.subject.keywordgrapheneen
dc.subject.keywordcopper foilen
dc.subject.keywordrapid thermal processen
dc.subject.keywordRaman spectroscopyen
dc.titleRapid thermal chemical vapor deposition of graphene on copperen
dc.type.okmG2 Pro gradu, diplomityö 
dc.type.ontasotMaster's thesisen
dc.type.ontasotPro gradu -tutkielmafi
dc.type.publicationmasterThesis 
local.aalto.digiauthask
local.aalto.digifolderAalto_89877
local.aalto.idinssi45701
local.aalto.inssiarchivenr977
local.aalto.inssilocationP1 Ark Aalto
local.aalto.openaccessno

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