Rapid thermal chemical vapor deposition of graphene on copper
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School of Electrical Engineering | Master's thesis
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AbstractThe goal of this work is to find suitable parameters for graphene growth on copper foil using rapid thermal process (RTP) chemical vapour deposition (CVD). The growth temperature and time were optimized as the gas flow was fixed (12/3 sccm methane/hydrogen). Various samples were fabricated to find an optimal growth temperature based on a certain growth time. Then the effect of growth time is considered. Graphene films on copper were initially characterized by Raman spectroscopy. Suitable films were transferred to silicon dioxide coated silicon chips for scanning Raman spectroscopy and scanning electron microscopy. Scanned Raman images are analysed in detail using statistical histograms to assess the graphene characteristics. Also full width at half maximum (FWHM) of samples were tested. The effect of the surface morphology of the copper foil and influence of the RTP process were also characterized to improve the quality of graphene. The optimized growth parameters were found to be 935°C and 60 s. The results indicate that surface pre-treatment of copper foil increases the quality of graphene.
Thesis advisorRiikonen, Juha
chemical vapor deposition, graphene, copper foil, rapid thermal process, Raman spectroscopy