Textile-Integrated ZnO-Based Thermoelectric Device Using Atomic Layer Deposition

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorMarin, Giovanni
dc.contributor.authorFunahashi, Ryoji
dc.contributor.authorKarppinen, Maarit
dc.contributor.departmentDepartment of Chemistry and Materials Science
dc.contributor.departmentNational Institute of Advanced Industrial Science and Technology
dc.date.accessioned2021-01-25T10:11:04Z
dc.date.available2021-01-25T10:11:04Z
dc.date.issued2020-12
dc.description| openaire: EC/FP7/339478/EU//LAYERENG-HYBMAT
dc.description.abstractHerein, a full thermoelectric (TE) device fabricated on textile using atomic layer deposition (ALD) and molecular layer deposition (MLD) thin-film techniques is demonstrated. The device consists of n-type ALD-grown ZnO or ALD/MLD-grown ZnO-organic components and p-type spray/immersion-coated PEDOT:PSS components. Different fabrication strategies and device designs (vertical and longitudinal) are investigated. The performance is evaluated by measuring the open-circuit voltage generated by the device over a range of temperature differences (between the hot and cold sides) up to 60 °C. At a fixed ΔT, the voltage generated is found to increase with increasing ZnO or ZnO-organic film thickness. An attractive feature with both ALD and MLD is that the film grows in a conformal manner on the textile fibers so that the entire textile piece becomes an active part of the device, corresponding to a remarkable coating-thickness increase. The voltage generated can also be increased by combining more TE pairs (even by just increasing the number of pairs by cutting the TE pads into smaller pieces). This research has thus proven the feasibility of ALD and MLD techniques in combination with a textile substrate in reinforcing the prospects of wearable thermoelectrics.en
dc.description.versionPeer revieweden
dc.format.extent9
dc.format.mimetypeapplication/pdf
dc.identifier.citationMarin , G , Funahashi , R & Karppinen , M 2020 , ' Textile-Integrated ZnO-Based Thermoelectric Device Using Atomic Layer Deposition ' , Advanced Engineering Materials , vol. 22 , no. 12 , 2000535 . https://doi.org/10.1002/adem.202000535en
dc.identifier.doi10.1002/adem.202000535
dc.identifier.issn1438-1656
dc.identifier.otherPURE UUID: 46372b56-f8e6-4246-9901-c98c9c5a6322
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/46372b56-f8e6-4246-9901-c98c9c5a6322
dc.identifier.otherPURE LINK: http://www.scopus.com/inward/record.url?scp=85088827598&partnerID=8YFLogxK
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/54817178/adem.202000535.pdf
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/102136
dc.identifier.urnURN:NBN:fi:aalto-202101251446
dc.language.isoenen
dc.publisherWILEY-VCH VERLAG
dc.relationinfo:eu-repo/grantAgreement/EC/FP7/339478/EU//LAYERENG-HYBMAT
dc.relation.ispartofseriesAdvanced Engineering Materialsen
dc.relation.ispartofseriesVolume 22, issue 12en
dc.rightsopenAccessen
dc.subject.keywordatomic layer deposition
dc.subject.keyworddevices
dc.subject.keywordtextiles
dc.subject.keywordthermoelectric
dc.subject.keywordthin films
dc.titleTextile-Integrated ZnO-Based Thermoelectric Device Using Atomic Layer Depositionen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.versionpublishedVersion
Files