Vibrations of the interstitial oxygen pairs in silicon
Loading...
Access rights
openAccess
publishedVersion
URL
Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
This publication is imported from Aalto University research portal.
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
Unless otherwise stated, all rights belong to the author. You may download, display and print this publication for Your own personal use. Commercial use is prohibited.
Authors
Date
Major/Subject
Mcode
Degree programme
Language
en
Pages
Series
Physical Review Letters, Volume 82, issue 20, pp. 4022-4025
Abstract
First-principles methods are used to calculate the structures and local vibrational modes of interstitial oxygen pairs in silicon. The staggered Oi−Si−Oi and skewed Oi−Si−Si−Oi structures are nearly degenerate in energy. The calculated local vibration frequencies and their pure and mixed 18O→16O isotopic shifts agree closely with experiments: the highest frequency is assigned to the skewed and the four lower ones to the staggered structure. This result may clear up the controversy of oxygen dimers in silicon, and also suggests a mechanism for fast oxygen diffusion.Description
Keywords
Other note
Citation
Pesola, M, von Boehm, J & Nieminen, R M 1999, 'Vibrations of the interstitial oxygen pairs in silicon', Physical Review Letters, vol. 82, no. 20, pp. 4022-4025. https://doi.org/10.1103/PhysRevLett.82.4022