Magnetoresistance effect in the fluctuating-valence BaSmFe_(2)O_(5+w) system
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Applied Physics Letters, Volume 77, issue 11, pp. 1683-1685
Abstract
The occurrence of negative magnetoresistance (MR) in semiconductive BaSmFe2O5+w double-perovskite samples is demonstrated. A peak in the MR value was observed at the Verwey–type transition temperature. The transition signifies the charge separation of the Fe2.5+ fluctuating mixed valence state into high-spin Fe2+ and Fe3+. The samples were ferrimagnetic with a Curie temperature of ∼710 K. Upon oxidizing/reducing the samples the size of the MR peak and the temperature at which the peak occurred varied. The largest MR value observed was 1.4% at 7 T.Description
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Nakamura, J, Linden, J, Karppinen, M & Yamauchi, H 2000, 'Magnetoresistance effect in the fluctuating-valence BaSmFe_(2)O_(5+w) system', Applied Physics Letters, vol. 77, no. 11, pp. 1683-1685. https://doi.org/10.1063/1.1310170