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Comparison of epitaxial thin layer GaN and InP passivations on InGaAs near-surface quantum wells
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Authors
Aierken, Abuduwayiti
Riikonen, Juha
Sormunen, Jaakko
Sopanen, Markku
Lipsanen, Harri
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en
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3
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Applied Physics Letters, Volume 88, issue 22, pp. 1-3
Abstract
The optical properties of the in situ epitaxial GaN and InP passivated InGaAs∕GaAs near-surface quantum wells, which were fabricated by metal organic vapor phase epitaxy, are investigated. Low-temperature photoluminescence (PL), time-resolved photoluminescence, and photoreflectance are used to study the passivation effect. Both GaN and InP passivations are observed to significantly enhance the PL intensity and carrier lifetime and to reduce the surface electrical fields. Comparison of the methods shows that the epitaxial InP passivation is more effective. However, epitaxial GaN and nitridation methods are comparable with InP passivation.
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Aierken, A, Riikonen, J, Sormunen, J, Sopanen, M & Lipsanen, H 2006, 'Comparison of epitaxial thin layer GaN and InP passivations on InGaAs near-surface quantum wells', Applied Physics Letters, vol. 88, no. 22, 221112, pp. 1-3. https://doi.org/10.1063/1.2208557